Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

查看全文 作　　者：Shuyu [1]Xiao;Yaming [1]Jin;Xiaomei [1,2]Lu;Sang-Wook [3]Cheong;Jiangyu [4,5]Li;Yang [1]Li;Fengzhen [1,2]Huang;Jinsong [1]Zhu

机构地区：[1]National Laboratory of Solid State Microstructures and Physics School,Nanjing University,Nanjing 210093,China;[2]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;[3]Rutgers Center for Emergent Materials and Department of Physics and Astronomy,Rutgers University,Piscataway,NJ 08854,USA;[4]Shenzhen Key Laboratory of Nanobiomechanics,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China;[5]Department of Mechanical Engineering,University of Washington,Seattle,W A 98195,USA

出　　处：《National Science Review》索引2020年第7卷第2期,共7页

基　　金：supported by the National Key Research Program of China(2016YFA0201004);the State Key Program for Basic Research of China(2015CB921201);the National Natural Science Foundation of China(11874208,51721001,51672123 and 61671235);the Priority Academic Program Development of Jiangsu Higher Education Institutions;supported by the U.S. Department of Energy(DOE)under Grant No.DOE:DE-FG02-07ER46382. 摘　　要：Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry,but also in their electronic,magnetic,and mechanical properties.Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale;the relatively lower controllability prevents their practical applications in nano-devices.In this work;with the advantages of 3D domain configuration detection based on piezoresponse force microscopy;we find that the mobility of three types of domain walls(tail-to-tail,head-to-tail,head-to-head)in(001)BiFeO3 films varies with the applied electrical field.Under low voltages;head-to-tail domain walls are more mobile than other domain walls;while,under high voltages,tail-to-tail domain walls become rather active and possess relatively long average lengths.This is due to the high nucleation energy and relatively low growth energy for charged domain walls.Finally;we demonstrate the manipulation of domain walls through successive electric writings,resulting in well-aligned conduction paths as designed;paving the way for their application in advanced spintronic;memory and communication nano-devices. 关键词：domain WALL FERROELECTRIC THIN film PIEZORESPONSE force MICROSCOPY DYNAMICS

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Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

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