维普中文期刊产品整合服务

Temperature-and thickness-dependence of robust out-of-plane ferroelectricity in CVD grown ultrathin van der Waals a-In2Se3 layers

查看全文 作　　者：Weng Fu [1]Io;Shuoguo [1]Yuan;Sin Yi [1]Pang;Lok Wing [1]Wong;Jiong [1]Zhao;Jianhua [1]Hao 高影响力作者 机构地区：[1]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China高影响力机构 出　　处：《Nano Research》索引2020年第13卷第7期,共6页高影响力期刊 基　　金：the grant from Research Grants Council of Hong Kong(GRF No.PolyU 153033/17P). 摘　　要：Two-dimensional(2D)ferroelectric materials with unique structure and extraordinary optoelectrical properties have attracted intensive research in the field of nanoelectronic and optoelectronic devices,such as optical sensors,transistors,photovoltaics and non-volatile memory devices.However,the transition temperature of the reported ferroelectrics in 2D limit is generally low or slightly above room temperature,hampering their applications in high-temperature electronic devices.Here,we report the robust high-temperature ferroelectricity in 2D a-In2Se3,grown by chemical vapor depostion(CVD),exhibiting an out-of-plane spontaneous polarization reaching above 200℃.The polarization switching and ferroelectric domains are observed in In2Se;nanoflakes in a wide temperature range.The coercive field of the CVD grown ferroelectric layers ilustrates a room-temperature thickness dependency and increases drastically when the film thickness decreases;whereas there is no large variance in the coercive field at dfterent termperature from the samples with identical thickness.The results show the stable ferroelectricit of In2Se3 nanoflakes maintained at high temperature and open up the opportunities of 2D materials for novel applications in high-temperature nanoelectronic devices. 关 键 词：ln2Se3 two-dimensional(2D)materials FERROELECTRICITY high-temperature coercive field
相关文献

参考文献(42)

引证文献(5)

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费