不同质子能量下65nm特征尺寸3D-SRAM器件能量沉积模拟研究

查看全文 作　　者：Ye [1]Bing;Liu [1]Jie;Liu [1]Tianqi;Luo [1]Jie;Ji [1]Qinggang;Zhao [1]Peixiong;Mo [1]Lihua;Cai [1]Chang;Hou [1]Mingdong;Sun [1]Youmei 机构地区：[1]不详 出　　处：《IMP & HIRFL Annual Report》索引2018年第1期,共1页 基　　金：Science and Technology on Analog Integrated Circuit Laboratory。 摘　　要：Since Heidel et al.have found that low-energy protons can significantly cause single event upset in nano��devices through direct ionization in the experiment[1],the study of low-energy proton induced SEU through direct ionization mechanism has received increasing attention.3D-IC technology based 3D SRAM places traditional SRAMs in different dies and stacks the dies for increase integration and speed.Because of this,the radiation effects between 3D SRAM and traditional SRAM is quite different.Therefore,the simulation of 3D SRAM energy deposit caused by low-energy protons is carried out here. 关 键 词：SRAM upset INTEGRATION