抗辐射FPGA单粒子翻转敏感性研究

查看全文 作　　者：Cai [1]Chang;Liu [1]Jie;Liu [1]Tianqi;Zhao [1]Peixiong;Li [1]Dongqing;Ye [1]Bing;Mo [1]Lihua;He [1]Ze;Sun [1]Youmei 机构地区：[1]不详 出　　处：《IMP & HIRFL Annual Report》索引2018年第1期,共1页 基　　金：National Natural Science Foundation of China(11805244,11675233)。 摘　　要：In our work,the presentative configuration memory(CM)with dual interlocked storage cell and(DICE)hardened in CMOS-based 65 nm FPGA were chosen for heavy-ion evaluation.CM adopting DICE hardened structure controlled the whole routing and logical resources in FPGA is the most essential parts in radiation hardened design.For basic CMOS FPGAs,the ionizing particles can momentarily generate charges and short-circuit transistor’drain to substrate,leading node transition and initial data upset.However,DICE cell indicates that energy deposition must affect the interlocked two logics and change the electrostatic potentials in two bi-stable circuits synchronously[1]. 关 键 词：ELECTROSTATIC CHARGES chosen