Suppression of leakage current in carbon nanotube field-effect transistors

查看全文 作　　者：Lin [1]Xu;Chenguang [1]Qiu;Lian-mao [1]Peng;Zhiyong [1]Zhang

机构地区：[1]Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing 100871,China

出　　处：《Nano Research》索引2021年第14卷第4期,共6页

基　　金：the National Key Research&Development Program(No.2016YFA0201901);the National Natural Science Foundation of China(No.61888102);the Beijing Municipal Science and Technology Commission(No.D1711000066170021-2). 摘　　要：Carbon nanotube field-effect transistor(CNT FET)has been considered as a promising candidate for future high-performance and low-power integrated circuits(ICs)applications owing to its ballistic transport and excellent immunity to short channel effects(SCEs).Still,it easily suffers from the ambipolar property,and severe leakage current at off-state originated from gate-induced drain leakage(GIDL)in CNT FETs with small bandgap.Although some modifications on device structure have been experimentally demonstrated to suppress the leakage current in CNT FETs,there is still a lack of the structure with excellent scalability,which will hamper the development of CNT FETs toward a competitive technology node.Here,we explore how the device geometry design affects the leakage current in CNT FETs,and then propose the possible device structures to suppress off-state current and check their availability through the two-dimensional(2D)TCAD simulations.Among all the proposed structures,the L-shaped-spacer CNT FET exhibits significantly suppressed leakage current and excellent scalability down to sub-50 nm with a simple self-aligned gate process.According to the simulation results,the 50 nm gate-length L-shaped-spacer CNT FET exhibits an off-state current as low as approximately 1 nA/μm and an on-current as high as about 2.1 mA/μm at a supply voltage of-1 V and then can be extended as a universal device structure to suppress leakage current for all the narrow-bandgap semiconductors based FETs. 关键词：carbon nanotube field-effect transistor leakage current TCAD simulation narrow-bandgap semiconductor

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Suppression of leakage current in carbon nanotube field-effect transistors

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