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Optical RAM and integrated optical memories:a survey

查看全文 作  者:Theoni [1]Alexoudi;George Theodore [2]Kanellos;Nikos [1]Pleros 高影响力作者 机构地区:[1]Department of Informatics,Aristotle University of Thessaloniki,Thessaloniki,Greece;[2]Department of Electrical&Electronic Engineering,University of Bristol,Bristol,UK高影响力机构 出  处:《Light(Science & Applications)》索引2020年第9卷第1期,共16页高影响力期刊 基  金:funding from the Hellenic Foundation for Research and Innovation(HFRI)and the General Secretariat for Research and Technology(GSRT)through the ORION project under Grant Agreement No.585. 摘  要:The remarkable achievements in the area of integrated optical memories and optical random access memories(RAMs)together with the rapid adoption of optical interconnects in the Datacom and Computercom industries introduce a new perspective for information storage directly in the optical domain,enabling fast access times,increased bandwidth and transparent cooperation with optical interconnect lines.This article reviews state-of-the-art integrated optical memory technologies and optical RAM cell demonstrations describing the physical mechanisms of several key devices along with their performance metrics in terms of their energy,speed and footprint.Novel applications are outlined,concluding with the scaling challenges to be addressed toward allowing light to serve as both a datacarrying and data-storage medium. 关 键 词:RAM TRANSPARENT SCALING
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