High-Performance Mg_(3)Sb_(2-x)Bi_(x) Thermoelectrics:Progress and Perspective

查看全文 作　　者：Airan [1]Li;Chenguang [2]Fu;Xinbing [1]Zhao;Tiejun [1]Zhu

机构地区：[1]State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,310027 Hangzhou,China;[2]Max Planck Institute for Chemical Physics of Solids,Nöthnitzer Str.40,01187 Dresden,Germany

出　　处：《Research》索引2020年第1期,共22页

基　　金：This work was supported by the National Natural Science Foundation of China(51761135127,51861145305);the National Science Fund for Distinguished Young Scholars(51725102);the Deutsche Forschungs-gemeinschaft(DFG,German Research Foundation)(392228380). 摘　　要：Since the first successful implementation of n-type doping,low-cost Mg_(3)Sb_(2-x)Bi_(x) alloys have been rapidly developed as excellent thermoelectric materials in recent years.An average figure of merit zT above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used n-type Bi_(2)Te_(3-x)Se_(x) alloys for either refrigeration or low-grade heat power generation near room temperature.In this review,with the structure-property-application relationship as the mainline,we first discuss how the crystallographic,electronic,and phononic structures lay the foundation of the high thermoelectric performance.Then,optimization strategies,including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping,are extensively reviewed.Mainstream directions targeting the improvement of zT near room temperature are outlined.Finally,device applications and related engineering issues are discussed.We hope this review could help to promote the understanding and future developments of low-cost Mg_(3)Sb_(2-x)Bi_(x) alloys for practical thermoelectric applications. 关键词：ALLOYS ALLOYING GRAIN

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High-Performance Mg_(3)Sb_(2-x)Bi_(x) Thermoelectrics:Progress and Perspective

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