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Formation and Growth of Stacking Fault in YBCO by Electron Irradiation

查看全文 作  者:SHEN [1]Guangjun;HAN [2]Yongsheng;JIN [2]Jirong;JIN [2]Xin;JI [2]Helin;YAO [2]Xixian;FAN [3]Zhanguo 高影响力作者 机构地区:[1]Analysis and Testing Center,Southeast University,Nanjing 210008;[2]Department of Physics,and National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210008;[3]Department of Non-ferrous Metallurgy,Northeast University of Technology,Shenyang 110006高影响力机构 出  处:《Chinese Physics Letters》索引1993年第10卷第5期,共3页高影响力期刊 基  金:Supported by the National Center for Research and Development of Superconductivity of China;the Foundation for Doctoral Education. 摘  要:This paper studies a new electron irradiation effect of the formation,movement and growth of stacking fault in YBa_(2) Cu_(3) O_(6+x).The energy of electron irradiation is about 160keV.It would be a promising way to enhance the density of pinning centers. 关 键 词:FAULT MOVEMENT ELECTRON
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