Fully Printed High‑Performance n‑Type Metal Oxide Thin‑Film Transistors Utilizing Coffee‑Ring Effect

查看全文 作　　者：Kun [1,2]Liang;Dingwei [1,2]Li;Huihui [1,2]Ren;Momo [1,3]Zhao;Hong [3]Wang;Mengfan [4]Ding;Guangwei [4]Xu;Xiaolong [4]Zhao;Shibing [4]Long;Siyuan [5]Zhu;Pei [5]Sheng;Wenbin [1,6]Li;Xiao [7]Lin;Bowen [1,6]Zhu

机构地区：[1]Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province,School of Engineering,Westlake University,Hangzhou 310024,China;[2]Zhejiang University,Hangzhou 310027,China;[3]Key Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xian 710071,China;[4]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;[5]Instrumentation and Service Center for Physical Sciences,Westlake University,Hangzhou 310024,China;[6]Institute of Advanced Technology,Westlake Institute for Advanced Study,Hangzhou 310024,China;[7]School of Science,Westlake University,Hangzhou 310024,China

出　　处：《Nano-Micro Letters》索引2021年第13卷第11期,共11页

基　　金：This research was financially supported under the Westlake Multidisciplinary Research Initiative Center(MRIC)Seed Fund(Grant No.MRIC20200101). 摘　　要：Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications. 关键词：Printed electronics Indium tin oxide Thin-film transistors Coffee-ring effect NMOS inverters

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Fully Printed High‑Performance n‑Type Metal Oxide Thin‑Film Transistors Utilizing Coffee‑Ring Effect

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