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Adjusting the SnZn defects in Cu_(2)ZnSn(S,Se)_(4) absorber layer via Ge^(4+) implanting for efficient kesterite solar cells

查看全文 作　　者：Yueqing [1,2]Deng;Zhengji [1,2]Zhou;Xin [1,2]Zhang;Lei [1,2]Cao;Wenhui [1,2]Zhou;Dongxing [1,2]Kou;Yafang [1,2]Qi;Shengjie [1,2]Yuan;Zhi [2,3]Zheng;Sixin [1,2]Wu 高影响力作者 机构地区：[1]Key Lab for Special Functional Materials,Ministry of Education,National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology,And School of Materials,Henan University,Kaifeng 475004,Henan,China;[2]Collaborative Innovation Centre of Nano Functional Materials and Applications,Henan,China;[3]Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province,College of Advanced Materials and Energy,Institute of Surface Micro and Nano Materials,Xuchang University,Xuchang 461000,Henan,China高影响力机构 出　　处：《Journal of Energy Chemistry》索引2021年第30卷第10期,共8页高影响力期刊 基　　金：financially supported by the National Natural Science Foundation of China(U1904192,62074052,52072327,61974173,61874159 and 51802081);the Key Science and Technology Research Project of Education Department of Henan Province(19A140003);the Key Science and Technology Program of Henan Province(192102210001);Zhongyuan Thousand Talents(Zhongyuan Scholars)Program of Henan Province(202101510004)。 摘　　要：The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage(V_(oc))deficit.Recently,Snzn deep point defect and associative defect cluster have been recognized as the main culprit for the Voc losses.Therefore,manipulating the deep-level donor of Snzn antisite defects is crucial for breaking through the bottleneck of present Cu_(2) ZnSn(S,Se)_(4)(CZTSSe)photovoltaic technology.In this study,the Snzn deep traps in CZTSSe absorber layer are suppressed by incorporation of Ge.The energy levels and concentration of Snzn defects measured by deep-level transient spectroscopy(DLTS)decrease significantly.In addition,the grain growth of CZTSSe films is also promoted due to Ge implantation,yielding the high quality absorber layer.Consequently,the efficiency of CZTSSe solar cells increases from 9.15%to 11.48%,largely attributed to the 41 mV Voc increment. 关 键 词：CZTSSe Defect Absorber layer Solar cells V_(oc)
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