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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

查看全文 作　　者：Xiaorui [1,3]Zhang;Huiping [2]Zhu;Song’ang [1,2]Peng;Guodong [2,3]Xiong;Chaoyi [1,3]Zhu;Xinnan [1,3]Huang;Shurui [1,3]Cao;Junjun [2,3]Zhang;Yunpeng [1,3]Yan;Yao [1,4]Yao;Dayong [1]Zhang;Jingyuan [1]Shi;Lei [2]Wang;Bo [2]Li;Zhi [1]Jin 高影响力作者 机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;[2]Key Laboratory of Science and Technology on Silicon Devices,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;[3]University of Chinese Academy of Sciences,Beijing 100049,China;[4]Department of Chemistry,City University of Hong Kong,Hong Kong 999077,China高影响力机构 出　　处：《Journal of Semiconductors》索引2021年第42卷第11期,共8页高影响力期刊 基　　金：This work was financially supported by the National Natural Science Foundation of China(No.61704189);the Common Information System Equipment Pre-Research Special Technology Project(31513020404-2);Youth Innovation Promotion Association of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015)。 摘　　要：Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts. 关 键 词：SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation
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