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Significantly enhanced varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by designing superior grain boundary:Deepening and broadening interface states

查看全文 作　　者：Zhuang [1,2]Tang;Kai [1]Ning;Zhiyao [1]Fu;Ze [3]Lian;Kangning [4]Wu;Shoudao [2]Huang 高影响力作者 机构地区：[1]State Key Laboratory of Disaster Prevention and Reduction for Power Grid Transmission and Distribution Equipment,SGCC(State Grid Corporation of China),Changsha 410000,China;[2]College of Electrical and Information Engineering,Hunan University,Changsha 410082,China;[3]State Grid Shanxi Electric Power Research Institute,Taiyuan 030001,China;[4]State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an Jiaotong University,Xi’an 710049,China高影响力机构 出　　处：《Journal of Materials Science & Technology》索引2022年第13期,共8页高影响力期刊 基　　金：financially supported by the National Natural Science Foundation of China(No.51937008);the Science and Technology Project of State Grid Corporation of China(SGCC)(No.5216A01600W3)。 摘　　要：Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 V.Greatly improved properties were attributed to the formation of superior grain boundary rather than the reduced grain size.Surprisingly,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little differences.Based on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain boundary.In this case,interface states were not easily entirely filled and the barrier could maintain its height under applied voltage.This work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary. 关 键 词：Schottky barrier Grain boundary Varistor ceramics Interface states
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