Alloying-engineered high-performance broadband polarized Bi_(1.3)In_(0.7)Se_(3)photodetector with ultrafast response

查看全文 作　　者：Fen [1]Zhang;Yali [2]Yu;Zhangxun [1]Mo;Le [3]Huang;Qinglin [1]Xia;Bo [4]Li;Mianzeng [1]Zhong;Jun [1]He

机构地区：[1]Hunan Key Laboratory of Nanophotonics and Devices,School of Physics and Electronics,Central South University,Changsha 410083,China;[2]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences&Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100083,China;[3]School of Material and Energy,Guangdong University of Technology,Guangzhou 510006,China;[4]Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China

出　　处：《Nano Research》索引2022年第15卷第9期,共7页

基　　金：the National Natural Science Foundation of China(Nos.12174451,61904205,and 61874141);the Natural Science Foundation of Hunan Province of China(Nos.2021JJ40795 and 2020JJ4677);the Open Sharing Fund for the Large-scale Instruments and Equipment of Central South University。 摘　　要：Topological insulators have important potential for applications in the field of nano/micro-optoelectronic devices.However,the large dark current seriously hinders the improvement of device performance.Alloying is an important means to control the physical properties of topological insulators.In this work,we have designed and prepared Bi_(1.3)In_(0.7)Se_(3)crystals.The optoelectronic properties of the individual Bi_(1.3)In_(0.7)Se_(3)nanowire-based photodetector are systematically investigated.The photodetector is very sensitive to broadband wavelength from solar-blind ultraviolet C(254 nm)to near-infrared(1,064 nm),showing superior optoelectrical properties with photoresponsivity of 241.3 A·W^(–1)and detectivity of 1.18×10^(12)Jones at 638 nm.Furthermore,the photodetector demonstrates ultrafast photoresponse characteristics with a photoresponse time of about 770 ns,which is 3 to 6 orders of magnitude lower than other compound semiconductors based on Bi or In reported so far.In addition,it also exhibits good polarization sensitivity in a broadband range from ultraviolet C(266 nm)to near-infrared(1,064 nm)and obtained the maximum dichroic ratio is 1.73 at 1,064 nm.Our results suggest that this platform creates new opportunities for the development of low-cost,high-sensitivity,high-speed,and broadband angle-sensitive photodetectors. 关键词：PHOTODETECTORS alloying of Bi_(1.3)In_(0.7)Se_(3) BROADBAND ultrafast response polarization

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Alloying-engineered high-performance broadband polarized Bi_(1.3)In_(0.7)Se_(3)photodetector with ultrafast response

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