1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate

查看全文 作　　者：Shenglei [1]ZHAO;Jincheng [1]ZHANG;Yachao [1]ZHANG;Lansheng [2]FENG;Shuang [1]LIU;Xiufeng [1]SONG;Yixin [1]YAO;Jun [3]LUO;Zhihong [1]LIU;Shengrui [1]XU;Yue [1]HAO

机构地区：[1]Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;[2]School of Mechano-Electronic Engineering,Xidian University,Xi’an 710071,China;[3]Testing Center,Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corporation,Chongqing 400060,China

出　　处：《Science China(Information Sciences)》索引2023年第66卷第2期,共6页

基　　金：supported in part by National Science Fund for Distinguished Young Scholars(Grant No.61925404);National Natural Science Foundation of China(Grant No.62074122);Fundamental Research Plan(Grant No.JCKY2020110B010);Major Projects of Shanxi Province(Grant No.20201102012)。 摘　　要：A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors(HEMTs)on SiC substrates is presented.The fabricated p-GaN HEMT with a gate-drain spacing LGD=5μm exhibited a threshold voltage of 1.10 V,a maximum drain current of 235 mA/mm,an ON/OFF ratio of 10^(8),and a breakdown voltage of 440 V.Benefiting from the semi-insulating and high-critical-electric-field substrate,the p-GaN HEMT with LGD=23μm achieved the remarkably high breakdown voltage of 1740 V with substrate grounded.This breakdown voltage is very high compared with the reported values for p-GaN HEMTs on silicon substrates with substrate grounded.The vertical breakdown voltage for the p-GaN-on-SiC material exceeded 3 kV with substrate grounded.In addition,the maximum drain current at 500 K was 48%of that at 300 K with a negligible threshold voltage shift.These results indicate the substantial potential of p-GaN gate HEMTs on SiC substrates for high-voltage power applications. 关键词：p-GaN gate HEMTS high voltage SiC substrate

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1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate

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