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Thermal shock resistance enhancement by improved interfacial bonding for carbon/aluminium composites

查看全文 作  者:Wenfu [1]Wei;Zhanglin [1]Huang;Guofeng [1]Yin;Zefeng [1,2]Yang;Xiaobo [1]Li;Haozi [1]Zuo;Qin [1]Deng;Guizao [1]Huang;Junwen [3]Ren;Qianhua [1]Liao;Yan [4]Yang;Guangning [1]Wu 高影响力作者 机构地区:[1]School of Electrical Engineering,Southwest Jiaotong University,Chengdu,China;[2]Handley Electronic Co.,Ltd,Changzhou,China;[3]College of Electrical Engineering,Sichuan University,Chengdu,China;[4]School of Electrical&Electronic Engineering,Nanyang Technological University,Singapore,Singapore高影响力机构 出  处:《High Voltage》索引2022年第7卷第5期,共8页高影响力期刊 基  金:National Natural Science Foundation of China,Grant/Award Numbers:52077182,51837009,U19A20105;Fundamental Research Funds for the Central Universities,Grant/Award Number:2682018CX17;National Rail Transit Electrification and Automation Engineering Technology Research Project;Chengdu Guojia Electrical Engineering Co.Ltd,Grant/Award Number:NEEC-2018-B06。 摘  要:Carbon/aluminium(C/Al)composites have the advantages of low density and high electrical conductivity,which have potential applications in aerospace,rail transportation and other fields.However,the unstable bonding of the C/Al interface and significant thermal expansion differences have resulted in risks of the composites'failure once suffering from severe thermal shock.In this work,the C/Al composites were prepared by the pressure impregnation method,and silicon(Si)was added to overcome the problems of C/Al non-wettability and thermal expansion differences.The effects of mass fractions of doped silicon on the mechanical properties,electrical conductivity and thermal shock resistance of C/Al composites were also examined.Results show that the formed SiC interlayer has effectively enhanced the interfacial bonding and reduced the differences in the thermal expansion coefficient of each component.As a result,the thermal shock resistance of the composites has been remarkably improved,and the flexural strength could remain 90%of the original level after the thermal shock test,compared with 50%of that without Si doping. 关 键 词:COMPOSITES BONDING shock
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