The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups

查看全文 作　　者：Hongxing [1,2]Liu;Tingting [2]Dai;Jialing [2]Zhou;Helin [2]Wang;Qing [1]Guo;Qiang [1]Guo;Erjun [1,2]Zhou

机构地区：[1]Henan Institute of Advanced Technology,School of Materials Science and Engineering,Zhengzhou University,Zhengzhou 450003,China;[2]National Center for Nanoscience and Technology,Beijing 100190,China

出　　处：《Nano Research》索引2023年第16卷第12期,共13页

基　　金：support from the National Natural Science Foundation of China(No.22109142);the Outstanding Talent Research Fund of Zhengzhou University(Nos.32340035 and 32340100). 摘　　要：Compared with perovskite solar cells and silicon solar cells,the excessive voltage loss(Vloss)becomes a stubborn stone that seriously hinders the further improvement of organic photovoltaic(OPV).Thus,many researchers focus on finding an effective material system to achieve high-performance OPVs with low Vloss.In recent 5 years,acceptor-donor-acceptor’-donor-acceptor(A-DA’D-A)type non-fullerene acceptors(NFAs)have attracted great attention because of their promising photovoltaic performance.Among them,A-DA’D-A type NFAs containing non-halogenated end group(NHEG)exhibit the large potential to achieve high open-circuit voltage(VOC)for the state-of-the-art OPVs,because of high-lying molecular energy levels and decreasing Vloss.In this review,we systematically summarize the recent development of A-DA’D-A type NHEG-NFAs and the impact of different NHEGs on the optoelectronic properties as well as the photovoltaic performance.In addition,we especially analyze the Vloss of NHEG-NFAs in the binary and ternary OPV devices.At last,we provide perspectives on the further molecular design and future challenges for this kind of materials as well as suggested solutions. 关键词：non-halogenated end group high voltage non-fullerene acceptor organic photovoltaic energy loss

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The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups

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