维普中文期刊产品整合服务

Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

查看全文 作　　者：Jidong [1,2]Huang;Jingren [1,2]Chen;Junhua [3]Meng;Siyu [1,2]Zhang;Ji [1,2]Jiang;Jingzhen [1,2]Li;Libin [1,2]Zeng;Zhigang [1,2]Yin;Jinliang [1]Wu;Xingwang [1,2]Zhang 高影响力作者 机构地区：[1]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;[2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;[3]Faculty of Science,Beijing University of Technology,Beijing 100124,China高影响力机构 出　　处：《Nano Research》索引2024年第17卷第4期,共8页高影响力期刊 基　　金：supported by the National Natural Science Foundation of China(Nos.62274151 and 61874106);the Natural Science Foundation of Beijing Municipality(No.4212045);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000). 摘　　要：As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices. 关 键 词：remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition PHOTODETECTORS
相关文献

参考文献(45)

耦合文献(39)

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费