Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

查看全文 作　　者：LIU Li-na, CHEN Chao, LIU Cai-hong(Dept.of Phy.,Xiamen University,Xiamen 361005,CHN)

出　　处：《Semiconductor Photonics and Technology》索引2003年第9卷第2期,共7页

摘　　要：The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm. 关键词：光谱响应数字模拟光电探测器硅

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Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

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