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14篇 您的检索式：期刊名="Electron Devices IEEE Transactionson"

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		题名	作者	年代	出处	被引量
	1	Some Future Directions for Repetitive Pulsed Power 显示文摘	Malcolm Buttram	2002	IEEE Transactionson Electron Devices2002，30，1：	1
	2	First principles simulations ofnanoscale silicon devices with uniaxial strain显示文摘	Zhang L N Zahid F Zhu Y	2013	IEEE Transactionson Electron Devices2013，60，10：	1
	3	OrganicELcellsusingalkalinemetalcompoundsaselectroninjectionmaterials显示文摘	WakimotoT FukudaY NagayamaK etal	1997	IEEE Transactionson Electron Devices1997，44，：	1
	4	A high-speed capacitive humidity sensor with on-chip thermal reset显示文摘	Uksong Kang Wise K D	2000	IEEE Transactionson Electron Devices2000，47，4：	1
	5	Breakdown Voltage in LDMOS Transistors Using Internal Field Rings显示文摘	Nezar A and TSalama C A Fellow IEEE	1991	IEEE Transactionson Electron Devices JULY 1991 381991，7，：	1
	6	GaN-based robust low-noise amplifiers 显示文摘	COLANGELI S BENITINI A CICCOGNANI W	2013	IEEE Transactionson Electron Devices2013，60，10：	1
	7	A MEMS-Based Ionization Gas Sensorusing Carbon Nanotubes 显示文摘	Hou Zhongyu Wu Jiahao Zhou Weimin	2007	IEEE Transactionson Electron Devices2007，54，6：	1
	8	Channel noise modeling of deep submicron MOSFETs显示文摘	CHEN C H DEEN M J	2002	IEEE Transactionson Electron Devices2002，49，8：	1
	9	Plasma electron density generated by a semiconductor bridge as a function of input energy and land material显示文摘	Jongdae K Kee-Soo N Jungling K C	1997	IEEE Transactionson Electron Devices1997，44，6：	1
	10	Functions and applications of monostable-bistable transition logic elements ( MOBILE's ) having multiple-input terminals 显示文摘	Maezawa K Akeyoshi T Mizutani T	1994	Electron Devices IEEE Transactionson1994，41，2：	1
	11	Short-channel effect in fully depleted SOl MOS- FETs 显示文摘	YONG K K	1989	IEEE Transactionson Electron Devices1989，36，2：	1
	12	High- Voltage Power Integrated Circuit Technology Using SOI for driving Plasma Display Panels显示文摘	Jongdae Kim Tae Moon Roh Sang-Gi Kim	2001	IEEE Transactionson Electron Devices2001，48，6：	1
	13	Monte Carlo simulation of ion implantation in crys-talline SiC with arbitrary polytypes 显示文摘	TIAN S	2008	IEEE Transactionson Electron Devices2008，55，8：	1
	14	Direct parameter extraction of SiGeHBTs for the VBIC bipolar compact model 显示文摘	Lee K Choi K Kook S	2005	IEEE Transactionson Electron Devices2005，52，3：	1

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