维普中文期刊产品整合服务
19篇 您的检索式:期刊名="Electron Mat"
    题名 作者 年代 出处 被引量
1Nonlinear Internal-model Control for Switched Reluctance Drives 显示文摘Ge Baoming Wang Xiangheng Su Pengsheng 2002IEEE Trans on Power Electronics Mat2002,17,3:1
2Role of T in Content in the Wetting of Cu and Au by T in-Bismuth Solders 显示文摘Tamar A Powers 1994Journal of electronic Mat erials1994,23,8:1
3显示文摘Chiou B S Warng I H 1998J Mat Sci Mat in Electron1998,9,:1
4显示文摘Cao M H Zhou D X Gong S P 2002J Mat Sci Mat in Electron2002,13,:1
5显示文摘Chiou B S Wang I H 1998J Mat Sci: Mat in Electron1998,9,:1
6Effect of the oxidation state of LiNbO3:Fe on the diffraction efficiency of multiple holograms显示文摘Geoffrey W Burr Demetri Psaltis 1974J Electron Mat1974,,3:1
7显示文摘He Z M Ma J Qu Y F 2000J Mat Sci Mat in Electron2000,11,:1
8Injection lasers based on InGaAs quantum dots in an AlGaAs matrix显示文摘ZHUKOV A E USTINOV V M EGOROV A Y 1998J Electron Mat1998,27,3:1
9Effect of MOVPE growth interrupts on the gallium arsenide interior interface morphology显示文摘Bernatz G Nau S Rettig R 2000Electron Mat2000,29,:1
10Preparation, Characterization and Dielectric Properties of Ba3Ln3Ti5Nb5O30 (Ln =La,Nd) 显示文摘Koshy P Kumari L P Sehastian M T 1998J Mat Sci Mater Electron1998,,9:1
11显示文摘Kang S W Rhee S W 2004J Mat Sci: Mat in Electronics2004,15,:1
12Control of Fe^2+ concentration of iron-doped lithium niobate显示文摘Phillips W Staebler D L 1974J Electron Mat1974,3,:1
13Effects of rare earth element Nd on the solderability and microstructure of Sn-Zn lead-free solder 显示文摘Hu Y Xue S Wang H 2011J Mat Sci-Mator Electron2011,22,5:1
14Electrical properties of RF magnetron sputtered Ba1-xSrxTiO3 TiO3 films on multi-layered bottom electrodes for high-density memory application显示文摘Panda B Samantaray C B Dhar A 2002J Mat Sci: Materals in Electronics2002,13,:1
15Micro - Raman Investigations of the degree of relaxation in thin SiGe buffer layers with high Ge content显示文摘Perova T S Maurice R Moore R A 2003J Mat Science: Mat in Electronics2003,14,:1
16Pt-Ru alloy electrode for (Ba, Sr) TiO3 capacitor显示文摘Yun J H Oh K Y 2002J Mat Sci: Materials in electronics2002,13,:1
17Mechanism of Defect Formation in Low-Dose Oxygen ImpLanted Silicon on Insulator Material显示文摘Bagchi S Lee J D Krause J 1996Journal of Electronic Mat1996,25,1:1
18Void-free Au-Sn eutectic bonding of GaAs dice and its characterization using scanning acoustic microscopy 显示文摘MATIJASEVIC G S LEE C C 1989J Electron Mat1989,18,32:1
19Electron Mobilty in Two-dimensional Electron Gas in AlGaN/GaN Heterostructures and in Bulk GaN显示文摘Shur M Gelmont B Khan M A 1996J Electron Mat1996,25,5:1
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费