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18篇 您的检索式：期刊名="IEDM IEEE"

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		题名	作者	年代	出处	被引量
	1	OUM- A180 nm nonvolatile memory cell element technology for stand- alone and embedded applications 显示文摘	Lai S Lowery T	2001	IEEE IEDM Technical Digest2001，5，：	1
	2	High-performance infrared thermal imaging with monolithic silicon focal planes operating at room temperature 显示文摘	Wood R A	1993	IEEE on IEDM1993，，：	1
	3	Control of phase and gain deviation in an octave bandwidth EHF TWT显示文摘	Puri M P	1986	IEDM IEEE1986，19，5：	1
	4	Performance limits in visible and infrared imager sensors显示文摘	Kozlowski Luo J Tomasini A	1999	IEEE IEDM Digest1999，99，：	1
	5	Self-aligned top and bottom metal double gate low temperature poly- Si TFT fabricated at 550℃ on non - alkali glass substrate by using DPSS CW laser lateral crystallization method 显示文摘	A Hara M Takei K Yoshino	2003	IEEE IEDM2003，03，：	1
	6	A statistical polishing pad model for chemical mechanical polishing 显示文摘	Yu Y Yu C Orlowski M	1993	IEEE IEDM Technical Digest1993，，：	1
	7	Iron-Free Permanent Magnet Structures for Travelling Wave Tube显示文摘	Herbert A Leupold Ernest Potenziani Ⅱ Anup S Tilak		IEEE IEDM0，91，：	1
	8	poly-si TFTfabricated at 150 °C using ICP-CVD and excimer laser annealing for Plastic substrates显示文摘	Lee M C Han S M Kang S H	2003	IEEE IEDM2003，7，1：	1
	9	Process Technologies for Advanced Metallization and Interconnect Systems 显示文摘	Sun S C	1997	IEEE - IEDM1997，27，5：	1
	10	Interconnect scaling-The Real Limiter to High Performance ULSI显示文摘	M Bohr	1995	IEEE IEDM Tech Dig1995，，：	1
	11	High-performance infrared thermalimaging with monolithic silicon focal planes operating at room temperature显示文摘		1993	IEEE on IEDM1993，，：	1
	12	ESDprotection scheme using CMOS compatible vertical bipolartransistor for 130nm CMOS generation显示文摘	OKUSHIMA M NOGUCHIM K SAWAHATA K	2000	IEEE IEDM TechDig2000，，：	1
	13	A physicallybased built-in spice poly-Si TFT model for circuit simulation and reliability evaluation显示文摘	CHUNG S S CHEN D C CHENG C T	1996	IEEE IEDM1996，，：	1
	14	Mass-Producive Ultra-Low Temperature ALD SiO2 Process Promising for Sub-90 nm Memory and Logic Devices显示文摘	Park Jae-Eun Ku Ja-Hum	2002	IEEE IEDM ''02 Digest2002，，12：	1
	15	Low Velocity Spread Axis Encirchng Electron Beam Forming System显示文摘	Scheitrum G P Symons R S True R B	1989	Tech Dig IEEE IEDM1989，，：	1
	16	Cryogenic behavior of scaled CMOS devices显示文摘	SCHRANKI ER J W HUANG J S T LUTZE R S L	1984	IEEE IEDM1984，27，1：	1
	17	High voltage thin layer devices(RESURF devices) 显示文摘	Appels J A	1979	IEEE IEDM Tech Digest1979，，：	1
	18	Control of phase and gain deviations in an octave bandwidth EHF TWT显示文摘	Handy R A Purl M P	1986	IEDM IEEE1986，19，5：	1

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