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218篇 您的检索式：期刊名="IEEE Elec Dev Lett"

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	题名	作者	年代	出处	被引量
1	Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's显示文摘	Zanoni E Crabbe E F	1993	IEEE Elec Dev Lett1993，14，2：	2
2	Demonstration of schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel 显示文摘	TAN E J PEY K L SINGH N	2008	IEEE Elec Dev Lett2008，29，10：	1
3	Fermi pinninginduced thermal instability of metal-gate work function 显示文摘	YU H Y REN C YEO Y C	2004	IEEE Elec Dev Lett2004，25，5：	1
4	A 210-GHz fr SiGe HBT with a non-self-aligned structure 显示文摘	Jeng S J Tagannathan B Rich J S	2001	IEEE Elec Dev Lett2001，22，11：	1
5	Improvement of junction leakage of nickel silicided junction by a Ti-capping layer显示文摘	Hou T-H Lei T-F Chao T-S	1999	IEEE Trans Elec Dev Lett1999，20，11：	1
6	Integrated 1V thermal shutdown circuit 显示文摘	NAGEL M H FONDERIE M J MEIJER G G M	1992	IEEE Elec Dev Lett1992，28，10：	1
7	Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's 显示文摘	Plummer J D	1997	IEEE Trans Elec Dev Lett1997，18，2：	1
8	Oxide-bypassed VDMOS (OBVDMOS):an alternative to super-junction high voltage MOS power devices显示文摘	LIANG Y C GAN K P SAMUDRA G S	2001	IEEE Elec Dev Lett2001，22，8：	1
9	显示文摘	Chau R	2004	IEEE Elec Dev Lett2004，25，：	1
10	25-nm pchannel vertical MOSFET's with SiGe source-drains显示文摘	Chang C-L Carroll M	1999	IEEE Trans Elec Dev Lett1999，20，6：	1
11	30-W/mm GaN HEMTs by field plate optimization显示文摘	Wu Y-F Saxler A Moore M	2004	IEEE Elec Dev Lett2004，25，3：	1
12	Silicon film thickness considerations in SOI-DTMOS 显示文摘	SIVARAM P ANAND B DESAI M P	2002	IEEE Elec Dev Lett2002，23，1：	1
13	Silicon film thickness optimization for SOI-DTMOS from circuit performance considerations显示文摘	ANAND B DESAI M P RAO V R	2004	IEEE Elec Dev Lett2004，26，60：	1
14	Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (1120)face 显示文摘	Senzaki J Kojima K Harada S	2002	IEEE Elec Dev Lett2002，23，1：	1
15	The effects of base dopant outdiffusion and undoped Si1-x Gex junction spacer layers in Si/Si1-x Gex/Si heterojunction bipolar transistors 显示文摘	Prinz E J Garone P Schwartz M	1991	IEEE Elec Dev Lett1991，12，2：	1
16	Depth profiling of border traps in MOSFET with high- k gate dielectric by charge-pumping technique 显示文摘	LU C Y CHANG-LIAO K S TSAI P H	2006	IEEE Elec Dev Lett2006，27，10：	1
17	Strong dependence of the inversion mobility of 4H and 6H SiC (0001)MOSFETs on the water content in pyrogenicre-oxidation annealing 显示文摘	Kosugi R Suzuki S Okamoto M	2002	IEEE Elec Dev Lett2002，23，3：	1
18	A super junction Schottky barrier diode with trench metaboxide- semiconductor structure 显示文摘	WANG Y XU L K MIAO Z K	2012	IEEE Elec Dev Lett2012，33，12：	1
19	Novel multipeak current-voltage characteristics of series-connected negative differential resistance devices 显示文摘	GAN K-J SU Y-K	1998	IEEE Elec Dev Lett1998，19，4：	1
20	Double-gate silicon-on-insulator transistor with volume inversion:a new device with greatly enhanced performances显示文摘	Balestra F Cristoloveanu S Benachir M	1987	IEEE Elec Dev Lett1987，8，3：	1

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