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1863篇 您的检索式：期刊名="IEEE ELECTRONICS LETTERS"

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	题名	作者	年代	出处	被引量
1	1800V NPN Bipolar Junction Transistors in 4H-SiC显示文摘	Ryu S H Agarwal A K Singh R	2001	IEEE Electron Device Letter2001，22，2：	2
2	Objective image fusion performance measure显示文摘	XYDEAS C S PETROVIC V	2000	IEEE Electronics Letters2000，36，4：	2
3	A rapid-response,high-sensitivity nanophase humidity sensor for respiratory monitoring 显示文摘	Kalkan A K Li Handong O'Brien C J	2004	Electron Device Letters IEEE2004，25，8：	1
4	Novel CMOS Schmitt Trigger with controllable Hysteresis 显示文摘	Hster A	1992	IEEE Electronics letters1992，28，7：	1
5	All-optical logic XOR functionality in an integrated SOA-MZI显示文摘	H Clen	2002	IEEE Electronics Letters2002，38，：	1
6	Gate Oxide Damage Reduction Using a Protective Dielectric Layer显示文摘	Gabriel C T Weling M G	1994	IEEE Electron Device Letter1994，15，8：	1
7	Simultaneous optimization of window and frame size for IrDA IrLAP links显示文摘	A C Boucouvalas	2001	IEEE Electronic Letters2001，37，16：	1
8	Continuous analytic Ⅰ-Ⅴ model for surrounding-gate MOSFETs显示文摘	JIMENEZ D SUNE J MARSAL L F	2004	IEEE Electron Devices Letters2004，25，8：	1
9	Miniature coplanar bandstop filter for Ka-band applications based on original resonant coupling irises topology显示文摘	Takacs A Aubert H Pons P	2004	IEEE Electronics Letters2004，40，2：	1
10	A novel silicon photo- voltaic cell using a low-temperature quasi-epitaxial silicon emitter 显示文摘	Farrokh-Baroughi M Sivoththaman S	2007	IEEE Electron Device Letters2007，28，7：	1
11	Angle estimation using ES- PRIT in MIMO radar 显示文摘	C DuoFang C Baixiao Q Guodong	2008	IEEE Electrons Letters2008，44，24：	1
12	Effects of symmetric distribution laws on spectral power density in randomized PWM显示文摘	Drissi K E K Luk P C K Wang Bin	2003	IEEE Power Electronics Letters2003，1，2：	1
13	The nearest three virtual space vector PWM: a modulation for the comprehensive neutral-point balancing in the three-level NPC inverter显示文摘	Busquets Monge S Bordonau J Boroyevich D	2004	IEEE Power Electronics Letters2004，2，1：	1
14	High-frequency performance of diamond field-effect transistor显示文摘	Hirotada Taniuchi Hitoshi Umezawa Takuya Arima	2001	IEEE Electron Device Letters2001，22，8：	1
15	30W/mm GaN HEMTs by field plate optimization显示文摘	Wu Y F Saxler A Moore M	2004	IEEE Electron Device Letters2004，25，3：	1
16	A new algorithm for rapid tracking of appzopmate mximum powe point in photovohaic systems显示文摘	Jain S Agarwal V	2004	IEEE Power Electronics Letters2004，2，1：	1
17	Surface leakage currents in SiN passivated AIGaN/GaN HFETs 显示文摘	TAN W S UREN M J HOUSTON P A	2006	IEEE Electron Device Letters2006，27，1：	1
18	Improved conversion ef- ficiency of textured InGaN solar cells with interdigitated imbedded electrodes显示文摘	Horng R Chu M Chen H	2010	Electron Device Letters IEEE2010，31，：	1
19	High n-type antimony dopant activation in germanium using laser annealing for n+/p junction diode显示文摘	THAREJA G CHOPARA S ADAMS B	2011	IEEE Electron Device Letters2011，32，7：	1
20	Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier显示文摘	J Y C Chang A A Abidi M Gaitan	1993	IEEE Electron Device Letters1993，14，5：	1

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