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24篇 您的检索式：期刊名="Phys Stat Sol C"

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	题名	作者	年代	出处	被引量
1	显示文摘	Mycielski A Burger A Sowinska M	2005	Phys Stat Sol (c)2005，5，：	1
2	Fabrication of two- and three-dimensional photonic crystals by electrochemical etching of silicon显示文摘	Trifonov T Marsal L F Rodriguez A	2005	Phys Stat Sol(c)2005，2，8：	1
3	Quantum size effects in ZnO nanowires显示文摘	Pedersen T G	2005	Phys Stat Sol (c)22005，12，：	1
4	Chemical Vapor Deposition of Zinc Oxide Thin Films on Y2O3/Si Substrate显示文摘	Lin C W Cheng T Y Chang L	2004	Phys Stat Sol C2004，1，4：	1
5	Chemical Vapor Deposition of Zinc Oxide Thin Films on Y2O3/Si Substrate显示文摘	Lin C W Cheng T Y Chang L	2004	Phys Stat Sol C2004，1，4：	1
6	显示文摘	Sung Park	2004	Phys Stat Sol (c)12004，，12：	1
7	Geometry and ordering of defects in non-stoichiometric futile显示文摘	KOUDRIACHOVA M	2007	Phys Stat Sol(C)2007，4，3：	1
8	显示文摘	Yae S Tanaka H Kobayashi T	2005	Phys Stat Sol (c)2005，2，9：	1
9	显示文摘	Raimundo D S Salcedo W J	2004	Phys Stat Sol (c) 12004，1，：	1
10	X-ray diffraction,photoluminescence and composition standards of compound semiconductors显示文摘	A Roshko K Bertness J Armstrong	2003	Phys Stat Sol (c) 02003，，3：	1
11	The coupling between antiferromagnetic transition and martensitic transformation in γ-MnFe based alloys显示文摘	Zhang J H Peng W Y Lu P	2004	Phys Stat Sol C2004，1，：	1
12	The coupling between antiferromagnetic transition and martensitec transformation in γ-MnFe based alloys显示文摘	Peng Wenyi Chen Shipu	2004	Phys Stat Sol(c)2004，7，：	1
13	Fabrication of A1- GaN/GaN MIS-HFET using an Al2 O3 high k dielectric 显示文摘	PARK K Y CHO H I LEE J H	2003	Phys Stat Sol(c)2003，，7：	1
14	显示文摘	Zhang Jihua Peng Wenyi Lu Ping	2004	Phys Stat Sol C2004，1，：	1
15	显示文摘	Shibata H Tampo H Yamada A	2006	Phys Stat Sol (c)2006，3，4：	1
16	The quenching of ortho-positronium显示文摘	Hyodo T Nakayama T Saito H	2009	Phys Stat Sol C2009，6，：	1
17	The fabrication of GaN-based optical cavity mirrors by focused ion beam milling显示文摘	Ren Qian Zhang Bei Xu Jun	2003	Phys stat sol (c)2003，7，：	1
18	Conduction and Valence Band Edge Properties of Hexagonal InN Characterized by Optical Measurements 显示文摘	Ishitani Y Terashima W Che S B	2006	Phys Stat Sol C2006，3，6：	1
19	Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD显示文摘	RUDZI IN SKI M DESMARIS V HAL P A V	2006	Phys Stat Sol (c)2006，3，6：	1
20	Effects of proton irra- diations on GaN-based materials 显示文摘	Chang J P Lin T Y Hong H F	2004	Phys Stat Sol (c)2004，1，10：	1

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