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11篇 您的检索式:作者名="A Uedono"
    题名 作者 年代 出处 被引量
1Homoepitaxial growth of SrTiO3 in an ultrahigh vacuum with automatic supplying oxygen 显示文摘SHIMOYAMA K KIYOHARA M UEDONO A 2002Jpn JAppl Phys2002,41,:1
2Study of oxygen vacancies in SrTiO3 by positron annihilation显示文摘UEDONO A SHIMAYAMA K KIYOHARA M 2002J Appl Phys2002,92,5:1
3Origin of defect-insensitive emission probability in In-containing (AI, In, Ga) N alloy semiconductors 显示文摘Chichibu S Uedono A Onuma T 2006Nature Materials2006,5,10:1
4显示文摘Uedono A Chen Z Q Suzuki R 2001J Appl Phys2001,90,5:1
5显示文摘Shimoyama K Kiyohara M Uedono A Jpn J Appl Phys0,41,:1
6Reduced Defect Densities in the ZnO Epilayer Grown on Si Substrates by Laser-assisted Molecular-beam Epitaxy Using a ZnS Epitaxial Buffer Layer显示文摘Onuma T Chichibu S F Uedono A 2004Appl Phys Lett2004,85,23:1
7Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer显示文摘ONUMA T CHICHIBU S F UEDONO A 2004Applied Physics Letters2004,85,23:1
8Correlation between the photoluminescence lifetime and defect densityin bulk and epitaxial ZnO显示文摘T Koida S F Chichibu A Uedono 2003Appl Phys Lett2003,82,:1
9Correlation Between the Photoluminescence Lifetime and Defect Density in Bulk and Epitaxial ZnO 显示文摘Koida T Chichibu S F Uedono A 2003Appl Phys Lett2003,82,:1
10Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams显示文摘Uedono A Wei L Tanigawa S 1994J Appl Phys1994,75,8:1
11显示文摘Shimoyama K Kiyohara M Uedono A Jpn J ApplPhys0,41,:1
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