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您的检索式：作者名="Alan X.Wang"
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| 1 | Transparent conductive oxide-gated silicon microring with extreme resonance wavelength tunability显示文摘Transparent conductive oxides have attracted escalating research interest for integrated photonic devices and metasurfaces due to the extremely large electro-optic modulation of the refractive index by the free-carrier-induced plasma dispersion effect. In this paper, we have designed and fabricated a silicon microring resonator using an indium-tin oxide gate as the electric-tuning electrode. It achieved an ultralarge resonance wavelength tunability of 271 pm/V, which is obtained through the reduced width of the ring waveguide and a high-dielectric-constant Hf O2 insulator. We demonstrated a broad resonance wavelength tuning range of over 2 nm with an ultrafast response time of less than 12 ns and near-zero static power consumption, which outperforms traditional thermal tuning. | ERWEN LI BEHZAD ASHRAFI NIA BOKUN ZHOU ALAN X.WANG | 2019 | Photonics Research2019，7，4： | 2 |
| 2 | Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide显示文摘Transparent conductive oxides have emerged as a new type of plasmonic material and demonstrated unique electro-optic(E-O) modulation capabilities for next-generation photonic devices. In this paper, we report an ultra-compact, broadband electro-absorption(EA) modulator using an epsilon-near-zero(ENZ) indium-tin oxide(ITO). The device is fabricated on a standard silicon-on-insulator platform through the integration with a 3 μm long, 300 nm wide gold plasmonic slot waveguide. The active E-O modulation region consists of a metal–HfO_2–ITO capacitor that can electrically switch the ITO into ENZ with ultra-high modulation strengths of 2.62 and 1.5 dB/μm in simulation and experiment, respectively. The EA modulator also demonstrated a uniform E-O modulation with 70 nm optical bandwidth from 1530 to 1600 nm wavelength. | QIAN GAO ERWEN LI ALAN X.WANG | 2018 | Photonics Research2018，6，4： | 2 |
| 3 | Characterization of field-effect mobility at optical frequency by microring resonators显示文摘A novel characterization method is proposed to extract the optical frequency field-effect mobility(μ_(op,FE))of transparent conductive oxide(TCO)materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide(ITiO)/SiO_(2)/silicon metal–oxide–semiconductor(MOS)capacitor.By operating the microring in the accumulation mode,the quality factor and resonance wavelength shift are measured and subsequently used to derive the��op,FE in the ultra-thin accumulation layer.Experimental results demonstrate that the μ_(op,FE) of ITiO increases from 25.3 to 38.4 cm2⋅V^(−1)⋅s^(−1) with increasing gate voltages,which shows a similar trend as that at the electric frequency. | Wei-Che Hsu Erwen Li Bokun Zhou Alan X.Wang | 2021 | Photonics Research2021，9，4： | 1 |
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