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14篇 您的检索式:作者名="BAHIR G"
    题名 作者 年代 出处 被引量
1Quantum efficiency and spectral response of compositionally graded HgCdTe P-n heterojunction photodiodes 显示文摘Rosenfeld D Garber V Bahir G 1994Appl Phys1994,76,7:1
2Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors显示文摘Kata O Bahir G Salzman J 2004Appl Phys Lett2004,84,20:1
3Intersubleveltransitions in InAs/GaAs quantum dots infraredphotodetectors显示文摘MAIMON S FINKMAN E BAHIR G 1998Applied Physics Letter1998,,14:1
4A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n ^+-p HgCdTe photodiodes显示文摘ROSENFELD D BAHIR G 1992IEEE Trans Electron Devices1992,39,7:1
5Planar p-on-n HgCdTe Heterostructure Infrared Photodiodes 显示文摘Bahir G Garber V Rosenfeld D 2001Applied Physics Letters2001,78,4:1
6The Effects ofBuilt-in Electric Field on the Performance of Com-positionally Graded P-on-n HgCdTe HeterojunctionPhotodiodes 显示文摘Rosenfeld D Garber V G Bahir G 1995Journal of Applied Physics1995,77,2:1
7Electron mobility in an AlGaN/GaN two-dimensional electron gas I-carrier concentration dependent mobility显示文摘 HORN A BAHIR G 2003IEEE Electron Devices2003,50,10:1
8Electron mobility in an A1GaN/GaN two-dimensional electron gas Icarrier concentration dependent mobility显示文摘Katz O Horn A Bahir G 2003IEEE Electron Devices2003,50,10:1
9Low-frequency 1/f noise and persistent transients in AIGaN-GaN HFETs显示文摘Katz O Bahir G Salzman J 2005IEEE Electron Devices Lett2005,26,6:1
10Compositionally Graded HgCdTe Photodiodes: Prediction of Spectral Re- sponse From Transmission Spectrum and the Impact of Grading显示文摘ROSENFELD D GARBER V BAHIR G 1995Journal of ELECTRONIC MATERIALS1995,24,9:1
11Intersublevel transi- tions in InAs/GaAs quantum dots infrared photodetectors 显示文摘MAIMON S FINKMAN E BAHIR G SCHACHAM S E GARCIA J M PETROFF P M 2003Applied Physics Letters2003,73,14:1
12Passivation of mercury cadmium telluride surfaces显示文摘Nemirovsky Y Bahir G 1989J Vac Sci Technol1989,7,:1
13Passivation of mercury cadmium telluride surfaces显示文摘Nemirovsky Y Bahir G 1989J Vac Sci Technol1989,7,2:1
14A Model for the Trap-Assisted Tunneling Mechanism in Diffused n-p and Implanted n+p HgCdTe Photodiodes显示文摘Rosenfeld D Bahir G 1992IEEE Transactions on Electron Devices1992,39,7:1
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