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8篇 您的检索式：作者名="Bananej"

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		题名	作者	年代	出处	被引量
	1	The Effect of Time-temperature Gradient Annealing on Microstructure,Optical Properties and Laser-induced DamageThreshold of TiO2 Thin Films显示文摘	Hassanpour A Bananej A	2013	Optik-International Journal for Light and Electron Optics2013，124，：	1
	2	Influence of intracerebroventricular administration of dopaminergic drugs on morphine state-dependent memory in the step-down passive avoidance test显示文摘	Bananej M Khalilzadeh A	2006	Neurobiol Learn Mem2006，86，3：	1
	3	The Effect of Time-Tem- perature Gradient Annealing on Microstructure, Optical Properties and Laser-induced Damage Threshold of TiO2 Thin Films 显示文摘	HASSANPOUR A BANANEJ A	2013	Optik-Intemational Journal for Light and Electron Optics2013，124，1：	1
	4	The effect of time- temperature gradient annealing on microstructure, optical properties and laser-induced damage threshold of TiO/ thin films 显示文摘	Amir Hassanpour Alireza Bananej	2013	Optik-International Journal for Light and E- lectron Optics2013，124，：	1
	5	Controllable all-optical switch using an EDF-ring coupled M-Z interferometer显示文摘	BANANEJ A LI C F	2004	IEEE Photon Techn Lett2004，16，9：	1
	6	Watermelon chlorotic stunt virus from the Sudan and Iran:Sequence comparisons and identification of a whitefly-transmission determinant显示文摘	Kheyr-Pour A Bananej K Dafalla G A Caciagli P Noris E Ahoonmanesh A Lecoq H Gronenborn B		0，，：	1
	7	The effect of porosity on the laser induced damage threshold of TiO2 and ZrO2 single layer films显示文摘	Bananej A Hassanpour A Razzaghi H	2010	Optics & Laser Technology2010，42，8：	1
	8	Low power all optical switches显示文摘In this paper, we propose a new design of all fiber optical switches by using a high finesse ring resonator (RR) side coupled Mach-Zehnder interferometer. We will show that by compensating the total loss in the RR the switching power can be decreased greatly and by loss, compensating the bistability effect in RR can be cancelled and the switching performance can be improved. In addition, we will show that by using Erbium doped fiber for fabricating the RR we can obtain switching power threshold in mW range.	Alireza Bananej 李淳飞	2004	Journal of Harbin Institute of Technology(New Series)2004，11，6：	0

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