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| 1 | Vertical-cavity surface-emitting lasers for data communication and sensing显示文摘Vertical-cavity surface-emitting lasers(VCSELs) are the ideal optical sources for data communication and sensing.In data communication, large data rates combined with excellent energy efficiency and temperature stability have been achieved based on advanced device design and modulation formats. VCSELs are also promising sources for photonic integrated circuits due to their small footprint and low power consumption. Also, VCSELs are commonly used for a wide variety of applications in the consumer electronics market. These applications range from laser mice to three-dimensional(3 D) sensing and imaging, including various 3 D movement detections, such as gesture recognition or face recognition. Novel VCSEL types will include metastructures, exhibiting additional unique properties, of largest importance for next-generation data communication, sensing, and photonic integrated circuits. | ANJIN LIU PHILIP WOLF JAMES A.LOTT DIETER BIMBERG | 2019 | Photonics Research2019，7，2： | 12 |
| 2 | 基于PAM4制的高速垂直腔面发射激光器研究进展显示文摘短距离光互联技术在云计算、5G通信、物联网技术等方面有重要的商业应用价值。基于高速垂直腔面发射激光器(Vertical-cavity surface-emitting laser,VCSEL)与多模光纤组成链路、采用直接调制检测、并使用如四电平脉冲幅度调制(Four-level pulse amplitude modulation,PAM4)等的高阶调制模式是现阶段短距离光互联链路方案的首选。本文首先介绍了短距离光互联应用的研究现状;第二部分介绍了VCSEL的发展、结构以及动态参数;第三部分介绍了PAM4调制方法及伴随使用的各种电子技术(均衡,前向纠错,脉冲整形);第四部分介绍了提高单链路速率的波分复用(Wavelength division multiplexing,WDM)技术;最后对以高速VCSEL、多模光纤、直接调制检测、PAM4调制以及波分复用技术的短距离光互联方案应用前景做了总结和展望。 | 杨卓凯 田思聪 LARISCH Gunter 贾晓卫 佟存柱 王立军 BIMBERG Dieter | 2020 | 发光学报2020，41，4： | 7 |
| 3 | 高速1550 nm垂直腔面发射激光器研究进展显示文摘垂直腔面发射激光器(VCSEL)具有生产成本低、调制速率高等优点,在光通信领域占有重要地位。随着数据需求量的飞速增长,在长距离信息传输中,具有低损耗的1550 nm波长的VCSEL引起了研究人员的兴趣。本文首先介绍了1550 nm VCSEL的结构,然后讨论了其带宽限制因素以及相应的改进方法,接着从NRZ(不归零)调制和PAM4(四电平脉冲幅度)调制两方面对近年来高速1550 nm VCSEL的研究进展进行了综述,最后展望了高速1550 nm VCSEL在未来光通信领域的发展和应用。 | 韩赛一 田思聪 徐汉阳 潘绍驰 MANSOOR Ahamed 佟存柱 王立军 BIMBERG Dieter 李充 | 2022 | 发光学报2022，43，5： | 4 |
| 4 | 53 Gbit/s高速单模940 nm垂直腔面发射激光器显示文摘制备了不同氧化孔径的940 nm垂直腔面发射激光器(VCSEL),选取氧化孔径为3,6,9μm的VCSEL进行了测试表征分析。氧化孔径为3,6,9μm的VCSEL的最高输出功率分别为2.92,6.79,10.49 mW,调制带宽分别为27.65,23.34,20.56 GHz。此外,氧化孔径为3μm的VCSEL在整个工作电流下都可实现单模工作,氧化孔径为6μm和9μm的VCSEL在较大电流下呈现少模和多模特性。最后,选取3μm氧化孔径的VCSEL进行数据传输测试,在非归零(NRZ)码下实现了传输速率53 Gbit/s。 | 徐汉阳 田思聪 韩赛一 潘绍驰 MANSOOR Ahamed 佟存柱 王立军 BIMBERG Dieter | 2022 | 发光学报2022，43，7： | 3 |
| 5 | 长春光机所高速垂直腔面发射激光器研究进展显示文摘高速垂直腔面发射激光器(VCSEL)是高速光通信的主要光源之一,受数据流量的迅速增长牵引,高速VCSEL正向更大带宽、更高速率方向发展。长春光机所团队通过优化VCSEL外延设计和生长、器件设计和制备、以及性能表征技术,在多个波长的高速VCSEL的调制带宽、传输速率、模式、功耗等性能方面取得了显著进展。实现高速单模940 nm VCSEL 27.65 GHz调制带宽和53 Gbit/s传输速率;通过波分复用基于850 nm、880 nm、910 nm和940 nm高速VCSEL实现200 Gbit/s链路方案;通过光子寿命优化,实现高速VCSEL低至100 fJ/bit的超低能耗;实现1030 nm高速VCSEL 25 GHz调制带宽;实现1550 nm高速VCSEL 37 Gbit/s传输速率。研制的高速VCSEL在光通信等领域有重要应用前景。 | 田思聪 佟存柱 王立军 Bimberg Dieter | 2022 | 中国光学(中英文)2022，15，5： | 3 |
| 6 | Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects显示文摘光相连(OI ) 是唯一的答案两个都在大带宽和数据中心和高效的计算机(HPC ) 的最小的电源消费上完成要求。垂直洞的射出表面的激光(VCSEL ) 是为 OI 的理想的轻来源并且广泛地被部署了。这篇论文将总结在 VCSEL 的调整速度,精力效率,和温度稳定性上取得的进步。特别有表面 nanostructures 的 VCSEL 将深入地被考察。如此的激光将提供新机会进一步增加 VCSEL 的表演并且为精力有效的 OI 打开一扇新门。 | Anjin LIU Dieter BIMBERG | 2016 | Frontiers of Optoelectronics2016，9，2： | 2 |
| 7 | Structural and compositional analysis of(InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots显示文摘We investigated metal-organic vapor phase epitaxy grown(InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots(QDs)with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy(X-STM)and atom probe tomography(APT).The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution,which provides detailed structural and compositional information on the system.The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of∼4×10^(11) cm^(−2).APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb.Finite element(FE)simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface.The composition of the QDs is estimated by combining the results from X-STM and the FE simulations,yielding∼In_(x)Ga_(1−x)As_(1−y)Sb_(y),where x=0.25–0.30 and y=0.10–0.15.Noticeably,the reported composition is in good agreement with the experimental results obtained by APT,previous optical,electrical,and theoretical analysis carried out on this material system.This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed.A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer,where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation.Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices. | Raja S.R.Gajjela Arthur L.Hendriks James O.Douglas Elisa M.Sala Petr Steindl Petr Klenovský Paul A.J.Bagot Michael P.Moody Dieter Bimberg Paul M.Koenraad | 2021 | Light(Science & Applications)2021，10，7： | 2 |
| 8 | Gain and threshold of quantum dot lasers: Theory and comparison to experiments 显示文摘 | GRUNDMANN M BIMBERG D | 1997 | JJAP1997，36，： | 1 |
| 9 | Electronic and optical properties of strained quantum dots modeled by 8-band k @ p theory 显示文摘 | Grundmann M Bimberg D | 1999 | Physical Review B1999，59，8： | 1 |
| 10 | Structural investigation of GaN layers grown on Si (111) substrates using a nitrated AlAs buffer layer显示文摘 | STRITTMATTER A BIMBERG D KROST A | 2000 | J Cryst Growth2000，221，14： | 1 |
| 11 | InAs/GaAspyramidal quantum dots : strain distribution, optical phonons,and electronic structure 显示文摘 | GRUNDMANN M STIER O BIMBERG D | 1995 | Physics Review B1995，52，11： | 1 |
| 12 | Slow and fast dynamics of gain and phase in a quantum dot semiconductor optical amplifier显示文摘 | Vallaitis T Koos C Bonk R Freude W Laemmlin M Meuer C Bimberg D Leuthold J | | 0，，01： | 1 |
| 13 | Control in Inter-firm Cooperative Relationships 显示文摘 | Bimberg J G | 1998 | Journal of Management Studies1998，35，4： | 1 |
| 14 | A proposed framework for behavioral accounting research 显示文摘 | Bimberg J G | 2011 | Behavioral Research in Accounting2011，23，1： | 1 |
| 15 | Spontaneous ordering of nanostructures on crystal surfaces 显示文摘 | Shchukin V A Bimberg D | 1999 | Reviews of Modern Physics1999，71，： | 1 |
| 16 | Hetero-interfaces in quantum wells and the epitaxial growth process: evaluation by luminescence techniques 显示文摘 | HERMAN M A BIMBERG D CHRISTEN J | 1991 | Journal of Applied Physics1991，70，2： | 1 |
| 17 | Quantum dot photonic devices for lightwave communication显示文摘 | D. Bimberg M. Kuntz M. Laemmlin | 2005 | Applied Physics A2005，，6： | 1 |
| 18 | GaAs-based 1.3 μm InGaAs quantum dot lasers: A status report显示文摘 | M. V. Maximov N. N. Ledentsov V. M. Ustinov Zh. I. Alferov D. Bimberg | 2000 | Journal of Electronic Materials2000，，5： | 1 |
| 19 | InGaAs-GaAs quantum-dot lasers 显示文摘 | BIMBERG D KIRSTAEDTER N LEDENTSOV N N | 1997 | IEEE Journal of Selected Topics in Quantum Electronics1997，3，2： | 1 |
| 20 | InGaAs-GaAs quantum-dot lasers显示文摘 | Bimberg D Kirstaedter N Ledentsov N N Alferov Zh I Kopev P S Ustinov V M | | 0，，02： | 1 |
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