| 1 | A versatile photodetector assisted by photovoltaic and bolometric effects显示文摘The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes it difficult for devices to stand out.Here,we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake.Vanadium dioxide is a classical semiconductor with a narrow bandgap,a high temperature coefficient of resistance,and phase transformation.Molybdenum ditelluride,a typical two-dimensional material,is often used to construct optoelectronic devices.The heterostructure can realize three different functional modes:(i)the p-n junction exhibits ultrasensitive detection(450 nm-2μm)with a dark current down to 0.2 pA and a response time of 17μs,(ii)the Schottky junction works stably under extreme conditions such as a high temperature of 400 K,and(iii)the bolometer shows ultrabroad spectrum detection exceeding 10μm.The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation(LWIR).This type of photodetector combines versatile detection modes,shedding light on the hybrid application of novel and traditional materials,and is a prototype of advanced optoelectronic devices. | Wei Jiang Tan Zheng Binmin Wu Hanxue Jiao Xudong Wang Yan Chen Xiaoyu Zhang Meng Peng Hailu Wang Tie Lin Hong Shen Jun Ge Weida Hu Xiaofeng Xu Xiangjian Meng Junhao Chu Jianlu Wang | 2020 | Light(Science & Applications)2020，9，1： | 3 |
| 2 | A study on ionic gated MoS2 phototransistors显示文摘Molybdenum disulfide(MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors. | Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao CHU | 2019 | Science China(Information Sciences)2019，62，12： | 0 |
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