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| 1 | Research on High Temperature and High Density White Oil Based Drilling Fluid and Its Application in Well 201H7-6显示文摘As the depth and horizontal length of shale gas development wells increase,the requirement for the temperature resistance and the ability of the drilling fluids to stabilize the shale formation becomes higher.A new type of high temperature and high density white oil based drilling fluid system has been developed in laboratory.Research shows that the drilling fluid system has good rheological property,low filtration loss,strong anti-debris pollution capability and good plugging performance at high temperature and high density.The system has been successfully applied in the 201H7-6 well.Application results show that the drilling fluid rheology,high temperature and high pressure fluid loss and demulsification voltage meet the field requirements.The drilling fluid performance is stable in drilling an 1800 m horizontal section,and no stuck or shale swelling and wellbore collapsing are induced.It is the first well drilled successfully with domestic white oil-based drilling fluid in Zigong Region.It also sets several new records including the deepest well,the shortest drilling cycle,and the fastest drilling speed in that region,which provides valuable experience for the future drilling activities. | Bobo Qin Yidi Wang Chunzhi Luo Gang Liu | 2019 | Open Journal of Yangtze Oil and Gas2019，4，3： | 2 |
| 2 | Metaanalysis of randomized controlled trials comparing Lichtenstein and totally extraperitoneal laparoscopic hernioplasty in treatment of inguinal hernias显示文摘 | Bobo Z Nan W Qin Q | 2014 | J Surg Res2014，192，2： | 1 |
| 3 | Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses显示文摘With the burgeoning developments in artificial intelligence,hardware implementation of artificial neural network is also gaining pace.In this pursuit,ferroelectric devices(i.e.,tunneling junctions and transistors)with voltage thresholds were recently proposed as suitable candidates.However,their development is hindered by the inherent integration issues of inorganic ferroelectrics,as well as poor properties of conventional organic ferroelectrics.In contrast to the conventional ferroelectric synapses,here we demonstrated a two-terminal ferroelectric synaptic device using a molecular ferroelectric(MF)/semiconductor interface.The interfacial resistance can be tuned via the polarization-controlled blocking effect of the semiconductor,owing to the high ferroelectricity and field amplification effect of the MF.Typical synaptic features including spike timing-dependent plasticity are substantiated.The introduction of the semiconductor also enables the attributes of optoelectronic synapse and in-sensor computing with high image recognition accuracies.Such interfaces may pave the way for the hardware implementation of multifunctional neuromorphic devices. | Yichen Cai Jialong Zhang Mengge Yan Yizhou Jiang Husnain Jawad Bobo Tian Wenchong Wang Yiqiang Zhan Yajie Qin Shisheng Xiong Chunxiao Cong Zhi-Jun Qiu Chungang Duan Ran Liu Laigui Hu | 2022 | npj Flexible Electronics2022，6，1： | 0 |
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