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您的检索式：作者名="Botong Zhou"
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| 1 | Thirteen Dipterocarpoideae genomes provide insights into their evolution and borneol biosynthesis显示文摘Dipterocarpoideae,the largest subfamily of the Dipterocarpaceae,is a dominant component of Southeast Asian rainforests and is widely used as a source of wood,damar resin,medicine,and essential oil.However,many Dipterocarpoideae species are currently on the IUCN Red List owing to severe degradation of their habitats under global climate change and human disturbance.Genetic information regarding these taxa has only recently been reported with the sequencing of four Dipterocarp genomes,providing clues to the function and evolution of these species.Here,we report on 13 high-quality Dipterocarpoideae genome assemblies,ranging in size from 302.6 to 494.8 Mb and representing the five most species-rich genera in Dipterocarpoideae.Molecular dating analyses support the Western Gondwanaland origin of Dipterocarpaceae.Based on evolutionary analysis,we propose a three-step chromosome evolution scenario to describe the karyotypic evolution from an ancestor with six chromosomes to present-day species with 11 and 7 chromosomes.We discovered an expansion of genes encoding cellulose synthase(CesA),which is essential for cellulose biosynthesis and secondary cell-wall formation.We functionally identified five bornyl diphosphate synthase(BPPS)genes,which specifically catalyze the biosynthesis of borneol,a natural medicinal compound extracted from damar resin and oils,thus providing a basis for large-scale production of natural borneol in vitro. | Zunzhe Tian Peng Zeng Xiaoyun Lu Tinggan Zhou Yuwei Han Yingmei Peng Yunxue Xiao Botong Zhou Xue Liu Yongting Zhang Yang Yu Qiong Li Hang Zong Feining Zhang Huifeng Jiang Juan He Jing Cai | 2022 | Plant Communications2022，3，6： | 1 |
| 2 | A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties显示文摘Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed. | Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 3 | Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD显示文摘Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy. | Wenbo Tang Xueli Han Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang | 2023 | Journal of Semiconductors2023，44，6： | 0 |
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