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您的检索式：作者名="Brahim Dkhil"
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| 1 | 弹性铁电材料的发展之路显示文摘Over the past two decades,flexible electronics have attracted numerous attentions for their potential use as flexible,stretchable,portable and conformable devices in various fields including computing,energy harvesting,robotics,sensors and transductors or health monitoring. | 胡本林 Brahim Dkhil 李润伟 | 2023 | Science Bulletin2023，68，22： | 0 |
| 2 | Ferroelectricity of pristine Hf_(0.5)Zr_(0.5)O_(2) films fabricated by atomic layer deposition显示文摘Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments. | 陈璐秋 张晓旭 冯光迪 刘逸飞 郝胜兰 朱秋香 冯晓钰 屈可 杨振中 祁原深 Yachin Ivry Brahim Dkhil 田博博 褚君浩 段纯刚 | 2023 | Chinese Physics B2023，32，10： | 0 |
| 3 | Large electrical strain in lead-free K_(0.5)Na_(0.5)NbO_(3)-based ceramics by heterovalent doping显示文摘Heterovalent doped(K_(0.48-0.07)xNa_(0.52-0.43)xBi_(0.5)x)(Nb_(0.95-0.95x)Sb_(0.05-0.05x)Zrx)O_(3)ceramics were fabricated using conventional solid-state reaction.Then,the phase structures,dielectric,ferroelectric,and electricstrain properties were investigated.The compositions were tuned to be located at polymorphic phase boundary with increasing heterovalent Bi3t and Zr4t doping levels.A large strain of 0.19%was obtained at relatively low electric fields of 30 kV/cm in the composition of x=0.04.The normalized large-signal d33*values were approximately 633 pm/V under a low driving electric field of 30 kV/cm,which were comparable or larger than the values reported for other lead-free families.The large strains obtained can be attributed to the formation of nanodomains and high-density domain walls,which were confirmed by the observations of domain morphology using transmission electron microscopy(TEM)technique.Excellent temperature stability of the strain properties of the x=0.04 sample could be ascribed to the sluggish behaviour for the local structural heterogeneity in heterovalent-ion doped KNN ceramic.Theoretical simulations revealed that the Zr^(4t)produce the local stress at the BO6 octahedra and Bi3t could yield off-centering of AO12 ployhedron due to the nature of Bi 6s lone pair electrons,which induced lattice expansion and local distortions in the sample.The local displacements are strongly anisotropic in heterovalent-ion doped system.It is believed that random local fields exist in these compositions owing to the eixstence of charge distribution.Such heterovalent doping of Bi^(3t)and Zr^(4t)could destory simultaneously the orthorhombic symmetry and the short-range ferroelecctric order,leading to the formation of complex nanodomains and local structral hetergenenity.Heterovalent doping may,therefore,offer a new avenve to design novel K0.5Na0.5NbO3(KNN)-based materials for their mutifunctional applications. | Xiangjian Wang Jun Wang Wenping Geng Guohua Dong Brahim Dkhil Xiaojie Lou | 2023 | Journal of Materiomics2023，9，5： | 0 |
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