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20篇 您的检索式：作者名="Bykhovsky"

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	题名	作者	年代	出处	被引量
1	Evaluation of the estimation accuracy of polarization-based roll angle measurement显示文摘	Plosker Effie Bykhovsky Dima Shlomi Arnon	2013	Applied Optics2013，52，21：	1
2	GaN-based electronic devices 显示文摘	Shur MS Gaska R Bykhovski A	1999	Solid-state Electronics1999，43，：	1
3	Elastic Strain Relaxation and Piezoeffect in GaN-AIN, GaN-A1GaN and GaN-InGaN Superlattices显示文摘	Bykhovski A D Gelmont B L Shur M S	1997	Journal of Applied Physics1997，81，9：	1
4	Elastic strain relaxation and piezoeffect in GaN-A1N, GaN-AIGaN and GaN- InGaN superlattices 显示文摘	BYKHOVSKI A D GELMONT B L SHURB M S	1997	JAP1997，81，9：	1
5	Two-dimensional hole gas induced by piezoelectric and pyroelectric charges显示文摘	Shur M S Bykhovski A D Gaska R	2000	Solid-state Electronics2000，44，：	1
6	Design and simulation of optical unguided bus interconnect显示文摘	Bykhovsky D Arnon S		0，，15：	1
7	The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure 显示文摘	BYKHOVSKI A GELMONT B SHUR M S	1993	JAP1993，74，11：	1
8	GaN- based electronic device显示文摘	SHUR M S GASKA R BYKHOVSKI A	1999	Solid State Electron1999，43，8：	1
9	Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostrueture field effect transistors 显示文摘	BYKHOVSKI A D GASKA R SHUR M S	1998	Appl Phys Lett1998，73，24：	1
10	Enhanced coupling of subterahertz radiation with semiconductor periodic slot arrays显示文摘	Parthasarathy R Bykhovski A Gelmont B	2007	Phys Rev Lett2007，98，15：	1
11	Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaNsuperlactices显示文摘	Bykhovski A D Gelmont B L Shur M S	1997	J Appl Phys1997，81，9：	1
12	Electron mobility in modulation-doped AlGaN-GaN heterostructures显示文摘	Gaska R Shur M S Bykhovski A D	1999	Appl Phys Lett1999，74，20：	1
13	The influence of the deformation on the two- dimensional electron gas density in GaN-AlGaN heterostructures显示文摘	GASKA R YANG J W BYKHOVSKI A D	1998	Appl Phys Lett1998，72，1：	1
14	Elastic strain relaxation and piezoeffect in GaN-AlN,GaN-AlGaN and GaN-InGaN superlactices显示文摘	GELMONT B L SHUR M S	1997	J Appl Phys1997，81，9：	1
15	Electron Mobility in Modulation-doped AlGaN-GaN Heterostructures显示文摘	Gaska R Shur M S Bykhovski A D	1999	Appl Phys Lett1999，74，2：	1
16	Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors 显示文摘	BYKHOVSKI A D GASKA R SHUR M S	1998	Appl Phys Lett1998，73，24：	1
17	查看详情显示文摘	Gaska R Shur M S Bykhovski A D Orlov A O Snider G L		0，，：	1
18	Piezoresistive effect in wurtzite n-type GaN 显示文摘	Bykhovski A D Kaminski V V Shur M S	1996	Apply Physics Letters1996，68，：	1
19	Tetrapyrroles: diversity, biosynthesis, and biotechnology显示文摘	Bykhovsky V Y Zaitseva N I Eliseev A A	1998	Appl Biochem Microbiol1998，，34：	1
20	Economic deposits:geological history,demand today and environmental aspects显示文摘	Patyk-Kara N G Bykhovsky L Z Spasskaya I I		0，，01：	1

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