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1篇 您的检索式：作者名="C.A.Faunce"

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		题名	作者	年代	出处	被引量
	1	Dose Dependence of Formation of Nanoscale Cavities in Helium-implanted 4H-SiC显示文摘Due to its superior mechanical and electrical properries,silicon carbide(SiC)is a technologically important material in the development of high-temperature,high-power,high-frequency electronic devices and in nuclear energy and waste technologies.In the former cases,helium implantation can be used to introduce	S.E.Donnelly V.M.Vishnyakov C.A.Faunce J.H.Evans	2001	IMP & HIRFL Annual Report2001，，1：	0

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