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| 1 | Controllable synthesis and optical properties of nano-CeO 2 via a facile hydrothermal route显示文摘 | Fanming Meng Leini Wang Jingbiao Cui | 2013 | Journal of Alloys and Compounds2013，，： | 1 |
| 2 | Characterization of the diamond growth process using optical emission spectros- copy显示文摘 | Jingbiao Cui Rongchuan Fang | 1997 | Journal of Applied Physics1997，81，6： | 1 |
| 3 | Structure and transport studies on nanometer YBCO/PBCGO multilayers显示文摘We have fabricated M doped (M = Al, Co, Fe, Ga, Ni and Zn) PrBa2Cu3O7 (PBCO), i.e. PrBa2(Cu1-xMx)3O7. The doping levels x are 0.05, 0.10, 0.15, and 0.20. X-ray data indicated no significant second phase for substituting Cu by Al, Co, Fe and Ga up to 20%. However impurity phases were detected for Ni and Zn substituted samples with doping levels equal to and higher than 15%. At 77 K the electrical resistivity of these compounds is orders in magnitude higher than that of PBCO. We also found that although the lattice parameters in the doped samples differ from PBCO, all samples remain orthorhombic. The lattice parameters of the doped sample are very close to those of YBa2Cu3O7-δ (YBCO) and PBCO. For this reason these compounds are better materials to be used as the I-layer for YBCO SIS junctions. Results of structural and transport studies on 2000 thick PrBa2[Cu0.80G0.2]3O7 (PBCGO) and YBCO/PBCGO multilayers are presented in this paper. | CHEN Tar-Pin WU Ke LI Qi CHEN Ben WANG ShonZeng KANDEL Hom SOO YuChong TIPPARACH Udom CUI JingBiao SEQ HyeWon CHEN ChiJen | 2009 | Chinese Science Bulletin2009，54，15： | 0 |
| 4 | Thermal Diffusivity of Diamond Films With Substrates显示文摘Diamond films were prepared by hot-filament chemical vapour deposition system.Photothermal deflection technique has been used to measure thermal diffusivity of diamond films with substrates.The influence of silicon or quartz substrate on the measurement of thermal diffusivity of film is presented.A simple two-layer model has been given to explain the effect of substrates on the measurement of thermal diffusivity and used to draw thermal diffusivity of diamond film from effective thermal diffusivity of film/substrate system. | CUI Jingbiao FANG Rongchuan | 1995 | Chinese Physics Letters1995，12，8： | 0 |
| 5 | Temperature Dependence of Photoluminescence in Porous Silicon显示文摘Porous silicon samples have been successfully prepared by elect rochemical etching technique,which show intense photoluminescence(PL)in the visible wave-length region.The measurements of the temperature dependence of PL in porous silicon show that the wavelength of the luminescent peak shifts to the blue and the PL band width does not change as the temperature of the sample increases over a wide range.The intensities of PL are measured as a function of temperature showing the confined exciton recombination behaviour,and the activation energies of 68.6 and 205meV of the excitons have been obtained for the low temperature and high temperature regions,respectively.The results suggest that the PL in porous silicon is due to the radiative recombination in a quantum wire system. | FANG Rongchuan LI Qingshan CUI Jingbiao | 1992 | Chinese Physics Letters1992，9，8： | 0 |
| 6 | Fermi level unpinning achievement and transport modification in Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb laminated stacks by doping engineering显示文摘Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving force to solve the issue.Herein,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A cm.The energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level unpinning.Carrier transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been extracted.Comprehensive analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices. | Lin Hao Gang He Shanshan Jiang Zhenxiang Dai Ganhong Zheng Jinyu Lu Lesheng Qiao Jingbiao Cui | 2022 | Journal of Materials Science & Technology2022，，26： | 0 |
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