| 2 | Si/Nanocrystalline Diamond Film Heterojunction Diodes Preparation显示文摘With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident. | Wu Nanchun Xia Yiben Tan Shouhong Wang Linjun Cui Jiangtao | 2006 | Journal of Rare Earths2006，24，z1： | 0 |
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