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		题名	作者	年代	出处	被引量
	1	Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates显示文摘AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 ?/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at Vgs=0.5 V and Vds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (?T ) and a 28-GHz maximum oscillation frequency (?max) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.	WANG Xiaoliang WANG Cuimei HU Guoxin WANG Junxi RAN Junxue FANG Cebao LI Jianping ZENG Yiping LI Jinmin LIU Xinyu LIU Jian QIAN He	2005	Science in China(Series F)2005，48，6：	7
	2	MOCVD-grown high-mobility Al 0.3 Ga 0.7 N/AlN/GaN HEMT structure on sapphire substrate显示文摘	Xiaoliang Wang Cuimei Wang Guoxin Hu Hongling Xiao Cebao Fang Junxi Wang Junxue Ran Jianping Li Jinmin Li Zhanguo Wang	2006	Journal of Crystal Growth2006，，：	2
	3	MOCVD-grown high-mobility Al 0.3 Ga 0.7 N/AlN/GaN HEMT structure on sapphire substrate显示文摘	Xiaoliang Wang Cuimei Wang Guoxin Hu Hongling Xiao Cebao Fang Junxi Wang Junxue Ran Jianping Li Jinmin Li Zhanguo Wang	2006	Journal of Crystal Growth2006，，：	1
	4	Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD显示文摘High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.	Fang Cebao Wang Xiaoliang Hu Guoxin Wang Junxi Wang Cuimei Li Jinmin	2006	Journal of Rare Earths2006，24，z1：	0

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