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| 1 | Remediation of saline–sodic soil with flue gas desulfurization gypsum in a reclaimed tidal flat of southeast China显示文摘Salinization and sodicity are obstacles for vegetation reconstruction of coastal tidal flat soils. A study was conducted with flue gas desulfurization(FGD)-gypsum applied at rates of 0, 15, 30, 45 and 60 Mg/ha to remediate tidal flat soils of the Yangtze River estuary.Exchangeable sodium percentage(ESP), exchangeable sodium(ExNa), p H, soluble salt concentration, and composition of soluble salts were measured in 10 cm increments from the surface to 30 cm depth after 6 and 18 months. The results indicated that the effect of FGD-gypsum is greatest in the 0–10 cm mixing soil layer and 60 Mg/ha was the optimal rate that can reduce the ESP to below 6% and decrease soil p H to neutral(7.0). The improvement effect was reached after 6 months, and remained after 18 months. The composition of soluble salts was transformed from sodic salt ions mainly containing Na^+, HCO_3^-+ CO_3^(2-)and Cl-to neutral salt ions mainly containing Ca^(2+)and SO_4^(2-). Non-halophyte plants were survived at 90%. The study demonstrates that the use of FGD-gypsum for remediating tidal flat soils is promising. | Yumei Mao Xiaping Li Warren A.Dick Liming Chen | 2016 | Journal of Environmental Sciences2016，28，7： | 14 |
| 2 | ONE-CELL-STATE METHOD FOR DETERMINATION OF ELECTRONIC STRUCTURE OF INTERMETALLIC COMPOUNDS显示文摘INTRODUCTIONInrecentyears,thePauling’svalencebond(VB)theoryhasbenmadeagreatprogresindesigninganddeterminingtheatomicstate,and... | Gao Yingjun , Chen Zhenhua , Huang Peiyun and Zhong Xiaping Institute of Nonequilibrium Materials, Central South University of Technology, Changsha 410083, P. R. China Physical Department, Guangxi University, Nanning 530004, P | 1998 | 中国有色金属学会会刊:英文版1998，8，4： | 2 |
| 3 | Expression character- istic and significance of interleukin-6, nuclear factor kappa beta, and bone formation markers in rat models of osteoporosis 显示文摘 | Zhu Xiaohu Luo Jie Chen Xiaping | 2008 | Transl Res2008，152，1： | 1 |
| 4 | Mathematical model for computing precise local tie vectors for CMONOC co-located GNSS/VLBI/SLR stations显示文摘The seven co-located sites of the Crustal Movement Observation Network of China(CMONOC) in Shanghai, Wuhan, Kunming, Beijing, Xi'an, Changchun, and Urumqi are equipped with Global Navigation Satellite System(GNSS), very long baseline interferometry(VLBI), and satellite laser ranging(SLR) equipment. Co-location surveying of these sites was performed in 2012 and the accuracies of the solved tie vectors are approximately 5 mm.This paper proposes a mathematical model that handles the least squares adjustment of the 3D control network and calculates the tie vectors in one step, using all the available constraints in the adjustment. Using the new mathematical model, local tie vectors can be more precisely determined and their covariance more reasonably estimated. | Shen Yunzhong You Xinzhao Wang Jiexian Wu Bin Chen Junping Ma Xiaping Gong Xiuqiang | 2015 | Geodesy and Geodynamics2015，6，1： | 1 |
| 5 | 4H SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain 显示文摘 | Huili Zhu Xiaping Chen Jiafa Cai | 2009 | Solid-State Electronics2009，53，： | 1 |
| 6 | BOND PARAMETERS AND ELECTRONIC STRUCTURE OF V, Nb AND Ta METALS显示文摘BONDPARAMETERSANDELECTRONICSTRUCTUREOFV,NbANDTaMETALS①GaoYingjun1,2,ChenZhenghua1,HuangPeiyun1andZhongXiaping21ResearchInstit... | Gao Yingjun1, 2, Chen Zhenghua1, Huang Peiyun1 and Zhong Xiaping21 Research Institute for Nonequilibrium Material Science and EngineeringCentral South University of Technology, Changsha 410083, P. R. China2 Physical Depar | 1998 | 中国有色金属学会会刊:英文版1998，8，1： | 0 |
| 7 | BOND PARAMETER AND ELECTRONIC STRUCTURE OF Sc,Y,Ti,Zr AND Hf METALS显示文摘1INTRODUCTIONInrecentyears,thePauling’svalencebond(VB)theoryhasbeenmadeagreatprogresindesigninganddeterminingtheatomicstate,a... | Yingjun, Gao Zhenghua, Chen Peiyun, Huang Xiaping, Zhong | 1998 | 中国有色金属学会会刊:英文版1998，8，3： | 0 |
| 8 | A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics显示文摘A 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor(UMOSFET)with semi-super-junction shiel-ded structure(SS-UMOS)is proposed and compared with conventional trench MOSFET(CT-UMOS)in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded(G)and ungrounded(NG)p-pillar is reduced by 52%(G)and 71%(NG)compared to CT-UMOS,respectively.Additionally,gate ox-ide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18%compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications. | Xiaojie Wang Zhanwei Shen Guoliang Zhang Yuyang Miao Tiange Li Xiaogang Zhu Jiafa Cai Rongdun Hong Xiaping Chen Dingqu Lin Shaoxiong Wu Yuning Zhang Deyi Fu Zhengyun Wu Feng Zhang | 2022 | Journal of Semiconductors2022，43，12： | 0 |
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