|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method显示文摘A single nano-cell-element of chalcogenide-random access memory was fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change'film and the top electrode film for the cell element is with diameter of 60nm. The reversible phase transition between the RESET state and the SET state was successively realized. The minimum SET current is obtained to be about 0.28mA. | 刘波 CHENBomy | 2005 | Chinese Physics Letters2005，22，3： | 1 |
| 2 | Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films显示文摘The effect of annealing temperature on crystallization of amorphous Ge2Sb2Te5 films with thickness of 4Onto isstudied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge2Sb2Te5film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as theannealing temperature increases. When the annealing temperature is too high, voids are formed, which mayoriginate from evaporation of the Ge2Sb2Te5 film at the elevated temperatures, formation of sink, being nucleatedby residual vacancies, and surface roughness. The resistivity of the Ge2Sb2Te5 film decreases with the increasingannealing temperature and has slight changes when the temperature is higher than 400℃. Phase transitions andscattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge2Sb2Te5 film. | LIUBo SONGZhi-Tang FENGSong-Lin CHENBomy | 2004 | Chinese Physics Letters2004，21，6： | 1 |
| 3 | Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films显示文摘Ge2Sb2Te5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge2Sb2Te5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively.The broad peak in the Raman spectra of amorphous Ge2Sb2Te5 film is due to the amorphous Te-Te- stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe4 and the Sb-Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb-Sb (Te2)and (Sb2) Sb-Sb (Te2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge2Sb2Te5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature,more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te2) Sb-Sb (Te2). | ChenBomy | 2004 | Chinese Physics B2004，13，11： | 1 |
| 4 | Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method显示文摘A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained. | 刘波 宋志棠 封松林 CHENBomy | 2004 | Chinese Physics Letters2004，21，10： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员