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您的检索式：作者名="Congwei Liao"
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| 1 | Poly-Si TFTs integrated gate driver circuit with charge-sharing structure显示文摘A p-type low-temperature poly-Si thin film transistors(LTPS TFTs) integrated gate driver using 2 nonoverlapped clocks is proposed.This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects.It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period.The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases.The proposed gate driver shows a simple circuit,as only 6 TFTs and 1 capacitor are used for single-stage,and the buffer TFT is used for both pulling-down and pulling-up of output electrode.Feasibility of the proposed gate driver is proven through detailed analyses.Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than0.8 pF,and pulse of gate driver outputs can be reduced to 5μs.The proposed gate driver can still function properly with positive V_(TH)shift within 0.4 V and negative V_(TH) shift within-1.2 V and it is robust and promising for high-resolution display. | Meng Chen Jiefeng Lei Shengxiang Huang Congwei Liao Lianwen Deng | 2017 | Journal of Semiconductors2017，38，5： | 1 |
| 2 | Design of integrated amorphous-silicon thin-film transistor gate driver显示文摘 | Liao Congwei He Changde | 2013 | Journal of Display Teehnology2013，9，1： | 1 |
| 3 | Mobility impact on compensation performance of AMOLED pixel circuit using IGZO TFTs显示文摘The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A 'source-follower' structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout. | Congwei Liao | 2019 | Journal of Semiconductors2019，40，2： | 1 |
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