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		题名	作者	年代	出处	被引量
	1	Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects显示文摘We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate(GS DG) MOSFET device.Our analysis is carried out by using an accurate continuous current-voltage (Ⅰ-Ⅴ) model,derived based on both Poisson’s and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions(subthreshold, linear and saturation) through a unique continuous expression.Therefore,the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.	Toufik Bentrcia Faycal Djeffal Abdel Hamid Benhaya	2012	Journal of Semiconductors2012，33，1：	4
	2	An equivalent circuit approach to organic solar cell modeling显示文摘	Cheknane A Hilal H S Djeffal F	2008	Microelectronics Journal2008，，39：	1
	3	An equivalent circuit approach to organic solar cell modelling显示文摘	Cheknane A Hilal H S Djeffal F	2008	Microeleetronic J2008，39，10：	1
	4	Tumour diameter: Pre- dictive criterion of intraoperative haemodynamic variations in ad- renal phaeochromocytoma surgery 显示文摘	Djeffal C Fourmarier M Bracq A	2008	Prog Uro2008，18，：	1
	5	An equivalent circuit approach to organic solar cell modeling 显示文摘	CHEKNANE A HILAL H S DJEFFAL F	2008	Microelectronics Journal2008，39，10：	1
	6	An equivalent circuit approach to organic solar cell modelling显示文摘	CHEKNANE A HILAL H S DJEFFAL F		0，，10：	1
	7	Efficient degradation of phenol using natural clay as heterogeneous Fenton-like catalyst显示文摘	Djeffal L Abderrahmane S Benzina M	2014	Environmental Science and Pollution Research2014，21，5：	1
	8	Numerical investigation of nanoscale SiGe DG MOSFET performance against the interfacial defects显示文摘	Toufik Bentrcia Fay?al Djeffal Zouhir Dibi Djemai Arar	2015	Phys. Status Solidi C . 2015 (1‐2)2015，，：	1
	9	Influences of TiC Impurities on Dry-sliding Wear of Polycrystalline Ceramic显示文摘The wear behavior of titanium silicon carbide MAX phase was investigated.Samples of highly pure TiSiCand containing 8% of TiC,sliding dryly against Corundum counterpart,were tested at various speeds increasing from 5 to 60 m/s and under applied pressure of 0.1-0.8 MPa.The sliding-wear tests were performed on Tribometer,at room temperature of 15℃ with a relative humidity of 10%.The expermental results show that the presence of TiC particles can be beneficial to reducing the wear rate for certain ranges of sliding speed and applied pressure.The sliding-wear performances were expressed as a mathematical model,obtained through a modelling by the method of design of experiment.The influence of TiC impurities on the wear behaviors was also investigated.It is concluded that the wear mechanisms of samples are more affected by the presence of TiC under the effect of applied pressure compared with that of the sliding speed.	BENDAOUDI Seif Eddine BOUNAZEF Mokhtar DJEFFAL Ali	2022	Journal of Wuhan University of Technology(Materials Science)2022，37，4：	0

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