4篇
您的检索式：作者名="Di Shaoyan"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region显示文摘The characteristics of nano scale n-type double gate MOSFETs with(100) and(110) surfaces are studied using 3 D full band ensemble Monte Carlo simulator. The anisotropic surface scattering mechanism is investigated. The(100) case is sensitive to the gate voltage more than the(110) case. The impact of crystal orientation and surface scattering on transport features mainly reflects in the carrier velocity distribution. The electron transport features with(100) direction are greater than that with(110) direction, but are more likely to be affected by the surface scattering. | Lei Shen Shaoyan Di Longxiang Yin Yun Li Xiaoyan Liu Gang Du | 2018 | Journal of Semiconductors2018，39，7： | 2 |
| 2 | Calibration of drift-diffusion model in quasi-ballistic transport region for Fin FETs显示文摘In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region which strongly affects the device characteristics.The usage of the steady-state transport model and the parameters of the drift-diffusion(DD) method may not correctly model the performance of these devices, including the velocity distributions of the carriers. Several previous studies have suggested modifying the transport parameters of the DD model to continue using it in the quasi-ballistic region. In this paper, a Monte Carlo(MC) simulator is used to calibrate the transport parameters of the DD model for silicon Fin FETs. The device features obtained via the parameter-calibrated DD model fit well with the MC simulator. The trends of the calibration factors are also investigated for varying drain voltage, gate voltage, fin width and gate length. | Lei SHEN Shaoyan DI Longxiang YIN Xiaoyan LIU Gang DU | 2018 | Science China(Information Sciences)2018，61，6： | 1 |
| 3 | Subthreshold behavior models for nanoscale short-channel junctionless cylindrical surrounding-gate MOSFETTs显示文摘 | Li Cong Zhuang Yiqi Di Shaoyan | 2013 | IEEE Transactions on Electron Devices2013，60，11： | 1 |
| 4 | Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime显示文摘This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion(DD) model for a performance evaluation of InG aA s MOSFETs in the quasi-ballistic regime. The simulation results of a deterministic multi-subband Boltzmann transport equation(BTE) solver serve as the standard.The DD model is calibrated both under low and high electric fields. The electrostatic characteristics, low field mobility model, and high field saturation model are calibrated in proper sequence, and a good agreement among the drive current, carrier distribution, and velocity distribution are achieved between the results of the calibrated DD model and the BTE solver. The proposed calibration procedure can also be employed in devices made of other materials. | Shaoyan DI Lei SHEN Pengying CHANG Kai ZHAO Tiao LU Gang DU Xiaoyan LIU | 2019 | Science China(Information Sciences)2019，62，6： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员