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2篇 您的检索式:作者名="Dmitry Shtansky"
    题名 作者 年代 出处 被引量
1Boron nitride nanotube growth via boron oxide assisted chemical vapor transport-deposition process using LiNO3 as a promoter显示文摘高纯净的直、分离的 multiwalled 硼氮化物 nanotubes (BNNT ) 作为一个倡导者用浮雕 3 与氨经由硼氧化物蒸汽反应被种。硼氧化物的仅仅踪迹数量被精力散的 X 光检查(EDX ) 和拉曼光谱学在 BNNT 作为杂质检测。硼氧化物蒸汽从 B 的混合物被产生, FeO ,吗并且 MgO 粉末加热了到 1,150 爠灥潲畤楣汢?湡?楨桧祬愠瑣癩??卒攠晦'太B?獕湩?桴?牵档湩氭歩?杁??牡慲獹愠??卒猠'T瑳慲整?ㄠ????猯灵 ̄?楤畢祴?桰桴污瑡?愨洠浥敢?景瀠慬瑳捩穩牥?慦業祬?湡??‵殣?岣僫篤蔿藏????鐿???????脿???鯀魈鱋??︿????????????璣阿??鲣??觎????鑔鍽???????????恘? 恘 ??Andrei T. Matveev Konstantin L. Firestein Alexander E. Steinman Andrey M. Kovalskii Oleg I. Lebedev Dmitry V. Shtansky Dmitri Golberg 2015Nano Research2015,8,6:2
2Combination of Instrumented Nanoindentation and Scanning Probe Microscopy for Adequate Mechanical Surface Testing显示文摘The elastic indentation modulus and hardness of standard bulk materials and advanced thin films were deter-mined by using the nanoindentation technique followed by the Oliver-Pharr post-treatment. After measure-ments with different loading/unloading schemes on chemically polished bulk titanium a substantial decrease of both modulus and hardness vs an increasing loading time was found. Then, hard nanostructured TiBN and TiCrBN thin films deposited by magnetron sputtering (using multiphase targets) on substrates of high roughness (sintered hard metal) and low roughness (silicon) were studied. Experimental modulus and hardness characterized by using two different nanoindenter tools were within the limits of standard deviation. However, a strong effect of roughness on the spread of the experimental values was observed and it was found that hard-ness and elastic indentation modulus obeyed a Gaussian distribution. The experimental data were discussed together with scanning probe microscopy (SPM) images of typical imprints taken after the nanoindentation tests and the local topography s strong correlation with the results of nanoindentation was described.Enrico Tam Mikhail Petrzhik Dmitry Shtansky Marie-Paule Delplancke-Ogletree 2009Journal of Materials Science & Technology2009,25,1:0
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