维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

2篇 您的检索式：作者名="Dong Hanpeng"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	A NOVEL MICRO-PELLISTOR BASED ON NANOPOROUS ALUMINA BEAM SUPPORT显示文摘The traditional design of the catalytic combustion gas sensor in Micro ElectroMechanical Systems (MEMS) micro-hotplate employs a Pt resistive track as the micro-heater. The realized structure and fabrication are the key elements of the micro-hotplate. Directly fabrication of micro-pellsitor catalyst is very difficult because of the small dimensions of the active area. In this paper, a novel micro-pellistor was designed by combining micro fabrication technique and nano technology. The supporting beams and micro-hotplate of the micro-pellistor were made of nonoporous alumina film. The active area of the designed and fabricated micro-pellistors ranges from 200×200 μm2 to 450×300 μm2. The micro- pellistor was heated by platinum thin film heater and the Pd catalyst was deposited by dipping the PdCl2 solution on the detecting element. The lowest power consumption is 50 mW at 500 °C and the maximum temperature can reach 900 °C before rupture. The response of the devices to methane is also tested. The new design provides a new way to fabricate micro-pellistor.	Chen Qingyong Dong Hanpeng Xia Shanhong	2012	Journal of Electronics(China)2012，29，5：	1
	2	Effects of silver-doping on properties of Cu(In,Ga)Se_(2) films prepared by Cu In Ga precursors显示文摘The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target.The precursors are selenized in the H_(2)Se-containing atmosphere to prepare(Ag,Cu)(In,Ga)Se_(2)(ACIGS)absorbers.The beneficial effects of Ag doping are demonstrated and their mechanism is explained.It is found that Ag doping significantly improves the films crystallinity.This is believed to be due to the lower melting point of chalcopyrite phase obtained by the Ag doping.This leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film crystallinity.The Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization annealing.It is found that Ag doping within a specific range can passivate the band tail and improve the quality of the films.Therefore,carrier recombination is reduced and carrier transport is improved.The negative effects of excessive Ag are also demonstrated and their origin is revealed.Because the atomic size of Ag is different from that of Cu,for the Ag/(Ag+Cu)ratio(AAC)≥0.030,lattice distortion is aggravated,and significant micro-strain appears.The atomic radius of Ag is close to those of In and Ga,so that the continued increase in AAC will give rise to the Ag;or Ag;defects.Both the structural and compositional defects degrade the quality of the absorbers and the device performance.An excellent absorber can be obtained at AAC of 0.015.	Chen Wang Daming Zhuang Ming Zhao Yuxian Li Liangzheng Dong Hanpeng Wang Jinquan Wei Qianming Gong	2022	Journal of Energy Chemistry2022，31，3：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费