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您的检索式：作者名="Faran Chang"
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| 1 | Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap显示文摘As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors.Here,the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers.Through strain mapping,it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers.Meantime,owing to the creation of hole potential wells within the original electron wells,the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart.Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations,which is a must for better optical performance.Furthermore,with an elaborate design of the inserted layers,the wave function overlap could be boosted without sacrificing other key device performances. | Chenyuan Cai Yunhao Zhao Faran Chang Xuebing Zhao Liting Yang Chongyun Liang Guowei Wang Zhichuan Niu Yi Shi Xianhu Liu Yuesheng Li Renchao Che | 2020 | Nano Research2020，13，6： | 1 |
| 2 | The measurement of responsivity of infrared photodetectors using a cavity blackbody显示文摘For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained. | Nong Li Dongwei Jiang Guowei Wang Weiqiang Chen Wenguang Zhou Junkai Jiang Faran Chang Hongyue Hao Donghai Wu Yingqiang Xu Guiying Shen Hui Xie Jingming Liu Youwen Zhao Fenghua Wang Zhichuan Niu | 2023 | Journal of Semiconductors2023，44，10： | 0 |
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