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11篇 您的检索式:作者名="Georgobiani"
    题名 作者 年代 出处 被引量
1Optical and Electrical Properties of Radical Beam Gettering Epitaxy Grown n-and p-type ZnO Single Crystals显示文摘Butkhuzi T V Bureyev A V Georgobiani A N 1992Cryst Crowth1992,117,14:1
2Investigation of Deep Centers of Chlorine Doped Zinc Sulfide Crystals显示文摘GEORGOBIANI A N MAEV R G OZEROV YU V 1976Physica Status Solidi (a)1976,38,1:1
3Luminescence of ZnO nanorods grown by chemical va- por deposition on (111) Si substrates 显示文摘GEORGOBIANI A N GRUZINTSEV A N KOZLOVSKII V I 2006Inorganic Ma- terials2006,42,7:1
4A new multifunctional phosphor based on yttrium oxysulfide 显示文摘GEORGOBIANI A N BOGATYREVA A A ISHCHENKO V M 2007Inorg Mater2007,43,10:1
5查看详情显示文摘Georgobiani A N Radautsan S I Tiginyanu I M 0,,:1
6查看详情显示文摘Georgobiani A N Radautsan S I Tiginyanu M 0,,:1
7Infrared Luminescence of Y2O2S:Er3+ and Y2O3:Er3+显示文摘A. N. Georgobiani A. N. Gruzintsev C. Barthou P. Benalloul 2004Inorganic Materials2004,,8:1
8Studies on some biological indices of grapes in relation to grafting显示文摘Mikeladze EG Georgobiani EL Gvamichava NE 1975Soobshcheniya Akademii Nauk Gruzinskoi SSR1975,80,1:1
9Exciton photoluminescence of hexagonal ZnO 显示文摘BUTKHUZI T V CHELIDZE T G GEORGOBIANI A N 1998Phys Rev B1998,58,10:1
10Point defects in active layers of TFEL devices based on ZnS显示文摘Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS: Er 3+ were studied. The results indicate that besides Er 3+ substituting for Zn 2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence isZhidong Lou A. N. Georgobiani Zheng Xu Chunxiang Xu Feng Teng Lei Yu Xurong Xu 1998Chinese Science Bulletin1998,43,6:0
11Simultaneous determination of trap depth and the ratio of the rate of recombination to that of capture from thermo-luminescence显示文摘徐征 张福俊 赵谡玲 王丽伟 A. N. Georgobiani V. B. Gutan 孟立建 2006Chinese Physics B2006,15,8:0
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