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3篇 您的检索式：作者名="Guoping RU"

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		题名	作者	年代	出处	被引量
	1	显示文摘	Qu Xingping Ru Guoping Xu Beilei	2000	Chinese Journal Semiconductos2000，21，5：	1
	2	Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions显示文摘Ultra-shallow Si p^(+)n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with those of secondary ion mass spectroscopy(SIMS),it is found that the dopant concentration profiles in heavily-doped p+layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.However,the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions(USJ)formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm,and dopant concentration up to 10^(21) cm^(-3).Also,its depth resolution can be as fine as 1 nm.Therefore,it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.	Huizhen WU Guoping RU Yonggang ZHANG Chengguo JIN Bunji MIZUNO Yulong JIANG Xinping QU Bingzong LI	2008	Frontiers of Electrical and Electronic Engineering in China2008，3，1：	0
	3	Reduction of Interference Oscillations in Observing Intersubband Transitions in AlSb/GaSb Superlattices by Fourier Transform Infrared Spectroscopy显示文摘Intersubband transitions from L_(1) to L_(2) subbands in AISb/GaSb superlattices in the 8-18μm wavelength range are observed by employing normal-and oblique-incident Fourier transform infrared(FTIR)spectroscopic techniques.Using AlSb rather than GaSb as the buffer layer,interference oscillations in normal-incident FTlR spectra are significantly reduced,which facilitates one to distinguish intersubband transition features.In the oblique-incident mode where a 45°thallium hexahedron is used for internal reflection,interference oscillations are eliminated,making it possible to observe weak intersubband transitions that cannot be distinguished in normal-incident absorption spectra.	RU Guoping LI Aizhen	1995	Chinese Physics Letters1995，12，11：	0

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