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1篇 您的检索式：作者名="H.F.Mohamed"

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		题名	作者	年代	出处	被引量
	1	Growth and fundamentals of bulk β-Ga_2O_3 single crystals显示文摘The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(~ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.	H.F.Mohamed Changtai Xia Qinglin Sai Huiyuan Cui Mingyan Pan Hongji Qi	2019	Journal of Semiconductors2019，40，1：	2

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