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| 1 | Polycrystalline diamond MESFETs by Au-mask technology for RF applications显示文摘Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China. | FENG ZhiHong WANG JingJing HE ZeZhao DUN ShaoBo YU Cui LIU JinLong ZHANG PingWei GUO Hui LI ChengMing CAI ShuJun | 2013 | Science China(Technological Sciences)2013，56，4： | 2 |
| 2 | Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V显示文摘Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively. | Yuanjie Lü Xubo Song Zezhao He Yuangang Wang Xin Tan Shixiong Liang Cui Wei Xingye Zhou Zhihong Feng | 2019 | Journal of Semiconductors2019，40，1： | 1 |
| 3 | Epitaxial graphene gas sensors on SiC substrate with high sensitivity显示文摘2D material of graphene has inspired huge interest in fabricating of solid state gas sensors.In this work,epitaxial graphene,quasi-free-standing graphene,and CVD epitaxial graphene samples on SiC substrates are used to fabricate gas sensors.Defects are introduced into graphene using SF6 plasma treatment to improve the performance of the gas sensors.The epitaxial graphene shows high sensitivity to NO2 with response of 105.1%to 4 ppm NO2 and detection limit of 1 ppb.The higher sensitivity of epitaxial graphene compared to quasi-free-standing graphene,and CVD epitaxial graphene was found to be related to the different doping types of the samples. | Cui Yu Qingbin Liu Zezhao He Xuedong Gao Enxiu Wu Jianchao Guo Chuangjie Zhou Zhihong Feng | 2020 | Journal of Semiconductors2020，41，3： | 0 |
| 4 | Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond显示文摘In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed I–V characteristics analysis,and radio frequency performances measurements.It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density.Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors.This work should be helpful for further performance improvement of the microwave power diamond devices. | Rui Zhou Cui Yu Chuangjie Zhou Jianchao Guo Zezhao He Yanfeng Wang Feng Qiu Hongxing Wang Shujun Cai Zhihong Feng | 2020 | Journal of Semiconductors2020，41，12： | 0 |
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